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1. (WO2019003242) METHOD FOR TEXTURING DIAMOND WIRE CUT MULTICRYSTALLINE SILICON WAFERS WITHOUT ADDITIVES
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Pub. No.: WO/2019/003242 International Application No.: PCT/IN2018/050348
Publication Date: 03.01.2019 International Filing Date: 31.05.2018
IPC:
H01L 31/0236 (2006.01) ,H01L 31/18 (2006.01) ,C23C 14/02 (2006.01) ,H01L 21/02 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0236
Special surface textures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
02
Pretreatment of the material to be coated
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
Applicants:
INDIAN INSTITUTE OF TECHNOLOGY BOMBAY [IN/IN]; IITB, Powai, Maharashtra Mumbai 400076, IN
Inventors:
BASU, Prabir Kanti; IN
PULLAIKODI, Sreejith Koorthedath; IN
Agent:
NARASANI, Arun Kishore; IN
Priority Data:
20172102261528.06.2017IN
Title (EN) METHOD FOR TEXTURING DIAMOND WIRE CUT MULTICRYSTALLINE SILICON WAFERS WITHOUT ADDITIVES
(FR) PROCÉDÉ DE TEXTURATION DE TRANCHES DE SILICIUM POLYCRISTALLIN COUPÉES PAR FIL DE DIAMANT SANS ADDITIFS
Abstract:
(EN) Embodiments herein provide a method for diamond wire cutting (DWC) multicrystalline silicon (multi-Si) wafer texturing. The method includes preparing an acid texturing solution comprising of a specific concentration of nitric acid and hydrofluoric acid. Further, the method includes forming a porous-Si layer by treating the DWC multi-Si wafer with the acid texturing solution for a pre-determined time interval and at a pre-determined temperature. The method also includes dissolving the porous-Si layer by dipping the DWC multi-Si wafer surface in an alkali solution for DWC multi- Si wafer texturing.
(FR) La présente invention concerne selon des modes de réalisation un procédé de coupe par fil de diamant (DWC) de texturation de tranche de silicium polycristallin (multi-Si) . Le procédé comprend la préparation d'une solution de texturation acide comprenant une concentration spécifique d'acide nitrique et d'acide fluorhydrique. En outre, le procédé comprend la formation d'une couche de Si poreux par traitement de la tranche de multi-Si DWC avec la solution de texturation acide pendant un intervalle de temps prédéfini et à une température prédéfinie. Le procédé comprend également la dissolution de la couche de Si poreux par trempage de la surface de tranche multi-Si DWC dans une solution alcaline pour la texturation de tranche multi-Si DWC.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)