Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019002931) DISTRIBUTED LC FILTER STRUCTURE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/002931 International Application No.: PCT/IB2018/000690
Publication Date: 03.01.2019 International Filing Date: 29.06.2018
IPC:
H01L 29/66 (2006.01) ,H01L 49/02 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
49
Solid state devices not provided for in groups H01L27/-H01L47/99; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02
Thin-film or thick-film devices
Applicants:
MURATA MANUFACTURING CO., LTD. [JP/JP]; 10-1, Higashikotari 1-chome, Nagaokakyo-shi Kyoto 617-8555, JP
Inventors:
VOIRON, Frédéric; FR
JATLAOUI, Mohamed Mehdi; FR
Priority Data:
17305846.230.06.2017EP
Title (EN) DISTRIBUTED LC FILTER STRUCTURE
(FR) STRUCTURE DE FILTRE LC DISTRIBUÉE
Abstract:
(EN) A distributed LC filter structure is disclosed. The distributed LC filter structure provides simultaneously a distributed inductance and a distributed capacitance in the same structure. Accordingly, discrete passive elements are eliminated and high, homogenous integration is achieved. Interconnections between the distributed inductance and the distributed capacitance are tailored to leverage a parasitic inductance of the distributed capacitance to increase the overall inductance of the distributed LC filter structure. Similarly, the interconnections are tailored to leverage a parasitic capacitance resulting from the distributed inductance to add up with the distributed capacitance augmenting the overall capacitance of the structure.
(FR) L'invention concerne une structure de filtre LC distribuée. La structure de filtre LC distribuée fournit une inductance distribuée et une capacité distribuée simultanément dans la même structure. Par conséquent, des éléments passifs discrets sont éliminés, et une intégration homogène élevée est obtenue. Des interconnexions entre l'inductance distribuée et la capacité distribuée sont configurées pour tirer profit d'une inductance parasite de la capacité distribuée de sorte à augmenter l'inductance globale de la structure de filtre LC distribuée. De façon similaire, les interconnexions sont configurées pour tirer profit d'une capacité parasite résultant de l'inductance distribuée, qui vient s'ajouter à la capacité distribuée de sorte à augmenter la capacité globale de la structure.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)