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1. (WO2019002453) TWO-DIMENSIONAL ELECTRON GAS FIELD-EFFECT TRANSISTOR, ASSOCIATED COMPONENT AND METHODS
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Pub. No.: WO/2019/002453 International Application No.: PCT/EP2018/067393
Publication Date: 03.01.2019 International Filing Date: 28.06.2018
IPC:
H01L 29/82 (2006.01) ,G01R 33/06 (2006.01) ,H01L 43/08 (2006.01) ,H01L 29/205 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
82
controllable by variation of the magnetic field applied to the device
G PHYSICS
01
MEASURING; TESTING
R
MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33
Arrangements or instruments for measuring magnetic variables
02
Measuring direction or magnitude of magnetic fields or magnetic flux
06
using galvano-magnetic devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
20
including, apart from doping materials or other impurities, only AIIIBV compounds
201
including two or more compounds
205
in different semiconductor regions
Applicants:
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE [FR/FR]; 3, rue Michel Ange 75016 PARIS, FR
UNIVERSITÉ DE MONTPELLIER [FR/FR]; 163 rue Auguste Broussonnet 34090 MONTPELLIER, FR
Inventors:
RAYMOND, André; FR
CHAUBET, Christophe; FR
Agent:
DOMENEGO, Bertrand; FR
BLOT, Philippe; FR
HABASQUE, Etienne; FR
HOLTZ, Béatrice; FR
NEYRET, Daniel; FR
COLOMBIE, Damien; FR
Priority Data:
17 5593528.06.2017FR
Title (EN) TWO-DIMENSIONAL ELECTRON GAS FIELD-EFFECT TRANSISTOR, ASSOCIATED COMPONENT AND METHODS
(FR) TRANSISTOR À EFFET DE CHAMP À GAZ D'ÉLECTRONS BIDIMENSIONNEL, COMPOSANT ET PROCÉDÉS ASSOCIÉS
Abstract:
(EN) The invention concerns a two-dimensional electron gas field-effect transistor (10) comprising: - a drain (14), - a source (16), - a heterojunction (22) comprising: - a first planar layer (26), the first layer (26) being produced from a first material and comprising a first sub-layer (28) formed by acceptor impurities, and - a second planar layer (30), the second layer (30) being produced from a second material and comprising a second sub-layer (32) formed by donor impurities, - a control unit (18) for controlling the current between the drain (14) and the source (16), the control unit (18) being a magnetic field applicator (34) perpendicular to the layers.
(FR) L'invention concerne un transistor (10) à effet de champ à gaz d'électrons bidimensionnel comportant : - un drain (14), - une source (16), - une hétérojonction (22) comportant : - une première couche (26) planaire, la première couche (26) étant réalisée en un premier matériau et comportant une première sous-couche (28) formée par des impuretés de type accepteur, et - une deuxième couche (30) planaire, la deuxième couche (30) étant réalisée en un deuxième matériau et comportant une deuxième sous- couche (32) formée par des impuretés de type donneur, - une unité de contrôle (18) du courant entre le drain (14) et la source (16), l'unité de contrôle (18) étant un applicateur de champ magnétique (34) perpendiculaire aux couches.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: French (FR)
Filing Language: French (FR)