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1. (WO2019001297) FEED STRUCTURE, UPPER ELECTRODE COMPONENT, AND PHYSICAL VAPOR DEPOSITION CHAMBER AND DEVICE
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Pub. No.: WO/2019/001297 International Application No.: PCT/CN2018/091642
Publication Date: 03.01.2019 International Filing Date: 15.06.2018
IPC:
C23C 14/35 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
35
by application of a magnetic field, e.g. magnetron sputtering
Applicants:
北京北方华创微电子装备有限公司 BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD. [CN/CN]; 中国北京市 北京经济技术开发区文昌大道8号 No.8 Wenchang Avenue, Beijing Economic-Technological Development Area Beijing 100176, CN
Inventors:
邓玉春 DENG, Yuchun; CN
张超 ZHANG, Chao; CN
陈鹏 CHEN, Peng; CN
邱国庆 QIU, Guoqing; CN
赵梦欣 ZHAO, Mengxin; CN
Agent:
北京天昊联合知识产权代理有限公司 TEE&HOWE INTELLECTUAL PROPERTY ATTORNEYS; 中国北京市 东城区建国门内大街28号民生金融中心D座10层张天舒 ZHANG, Tianshu 10th Floor, Tower D, Minsheng Financial Center, 28 Jianguomennei Avenue, Dongcheng District Beijing 100005, CN
Priority Data:
201710518535.129.06.2017CN
Title (EN) FEED STRUCTURE, UPPER ELECTRODE COMPONENT, AND PHYSICAL VAPOR DEPOSITION CHAMBER AND DEVICE
(FR) STRUCTURE D'ALIMENTATION, COMPOSANT D'ÉLECTRODE SUPÉRIEURE ET CHAMBRE ET DISPOSITIF DE DÉPÔT PHYSIQUE EN PHASE VAPEUR
(ZH) 馈入结构、上电极组件以及物理气相沉积腔室和设备
Abstract:
(EN) A feed structure (100) for a physical vapor deposition device, comprising a first lead-in component (110) for receiving power, a second lead-in component (120) coupled to the first lead-in component (110), and a plurality of distributors (130) for evenly distributing power to targets, one end of the distributor (130) being coupled to the second lead-in component(120), the other end being used for supplying power to the target (300), and the first lead-in component (110) and the second lead-in component (120) being arranged coaxially around an axis (310) of the target (300). Further disclosed is an upper electrode component comprising a feed-in structure (100) as well as a physical vapor deposition chamber and device.
(FR) Cette invention concerne une structure d'alimentation (100) pour un dispositif de dépôt physique en phase vapeur, comprenant un premier composant d'entrée (110) pour recevoir de l'énergie, un second composant d'entrée (120) couplé au premier composant d'entrée (110), et une pluralité de distributeurs (130) pour distribuer uniformément de l'énergie à des cibles, une extrémité du distributeur (130) étant couplée au second composant d'entrée (120), l'autre extrémité étant utilisée pour fournir de l'énergie à la cible (300), et le premier composant d'entrée (110) et le second composant d'entrée (120) étant agencés de manière coaxiale autour d'un axe (310) de la cible (300). L'invention concerne en outre un composant d'électrode supérieure comprenant une structure d'alimentation (100) ainsi qu'une chambre et un dispositif de dépôt physique en phase vapeur.
(ZH) 一种用于物理气相沉积设备的馈入结构(100),包括用于接收功率的第一引入件(110)、耦接至第一引入件(110)的第二引入件(120)和用于向靶材均匀分配功率的多个分配件(130),分配件(130)一端耦接第二引入件(120),另一端用于向靶材(300)提供功率,第一引入件(110)和第二引入件(120)围绕靶材(300)的轴线(310)同轴设置。还公开了包括馈入结构(100)的上电极组件以及物理气相沉积腔室和设备。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)