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1. (WO2019000872) SMALL-SIZE INFRARED SENSOR STRUCTURE AND PREPARATION METHOD THEREFOR
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Pub. No.: WO/2019/000872 International Application No.: PCT/CN2017/118010
Publication Date: 03.01.2019 International Filing Date: 22.12.2017
IPC:
H01L 27/146 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
Applicants:
上海集成电路研发中心有限公司 SHANGHAI IC R & D CENTER CO., LTD. [CN/CN]; 中国上海市 浦东新区张江高科技园区高斯路497号唐晨晨 497 Gaosi Road, Zhangjiang Hi-Tech Park, Pudong Shanghai 201210, CN
Inventors:
康晓旭 KANG, Xiaoxu; CN
赵宇航 ZHAO, Yuhang; CN
Agent:
上海天辰知识产权代理事务所(特殊普通合伙) SHANGHAI TIANCHEN INTELLECTUAL PROPERTY AGENCY; 中国上海市 普陀区中江路388弄国盛中心1号楼3302室曹婷 CAO, Ting 3302 Tower 1, No. 388 Zhongjiang Road, Putuo Shanghai 200062, CN
Priority Data:
201710500092.327.06.2017CN
Title (EN) SMALL-SIZE INFRARED SENSOR STRUCTURE AND PREPARATION METHOD THEREFOR
(FR) STRUCTURE DE CAPTEUR INFRAROUGE DE PETITE TAILLE ET SON PROCÉDÉ DE PRÉPARATION
(ZH) 一种小尺寸红外传感器结构及其制备方法
Abstract:
(EN) A small-size infrared sensor structure and a preparation method therefor. A groove (106) is etched in a conductive beam region, and a conductive beam (L) is formed by the side wall of the groove, so that adjacent pixel element structures can share a small-size infrared sensor structure with a conductive support hole (Z), thereby improving integration degree of the pixel element structures, enlarging the areas of the infrared detection areas of the pixel element structures, and improving infrared detection efficiency.
(FR) L'invention concerne une structure de capteur infrarouge de petite taille et son procédé de préparation. Une rainure (106) est gravée dans une région de faisceau conducteur, et un faisceau conducteur (L) est formé par la paroi latérale de la rainure, de telle sorte que des structures d'élément de pixel adjacentes peuvent partager une structure de capteur infrarouge de petite taille avec un trou de support conducteur (Z), ce qui permet d'améliorer le degré d'intégration des structures d'élément de pixel, d'agrandir les zones des zones de détection infrarouge des structures d'élément de pixel, et d'améliorer l'efficacité de détection infrarouge.
(ZH) 一种小尺寸红外传感器结构及其制造方法。通过在导电梁区域刻蚀出沟槽(106),利用沟槽侧壁来形成导电梁(L),从而实现了相邻像元结构共同享有一个导电支撑孔(Z)的小尺寸红外传感器结构,从而提高了像元结构的集成度,增大了像元结构中红外探测区域的面积,提高了红外探测效率。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)