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1. (WO2019000477) METHOD FOR PREPARING CDS NANORODS
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Pub. No.: WO/2019/000477 International Application No.: PCT/CN2017/091448
Publication Date: 03.01.2019 International Filing Date: 03.07.2017
IPC:
B01J 27/04 (2006.01) ,H01L 31/073 (2012.01)
B PERFORMING OPERATIONS; TRANSPORTING
01
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
J
CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS, COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
27
Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
02
Sulfur, selenium or tellurium; Compounds thereof
04
Sulfides
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
072
the potential barriers being only of the PN heterojunction type
073
comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
Applicants:
海门市品格工业设计有限公司 HAIMEN THE PINGE INDUSTRIAL DESIGN CO., LTD [CN/CN]; 中国江苏省南通市 海门市海门港新区发展大道99号 No.99 Development Road, Haimen Port, Haimen Nantong, Jiangsu 226100, CN
Inventors:
黄敏艳 HUANG, Minyan; CN
Agent:
南京利丰知识产权代理事务所(特殊普通合伙) NANJING LI&FENG INTELLECTUAL PROPERTY AGENCY (SPECIAL GENERAL PARTNERSHIP); 中国江苏省南京市 秦淮区中华路50号江苏国际经贸大厦1801室王锋 WANG, Feng Room 1801, Jiangsu International Trade Building, No.50, Zhonghua Road, Qinhuai District Nanjing, Jiangsu 211100, CN
Priority Data:
201710498719.627.06.2017CN
Title (EN) METHOD FOR PREPARING CDS NANORODS
(FR) PROCÉDÉ DE PRÉPARATION DE NANOTIGES EN CDS
(ZH) 一种CdS纳米棒的制备方法
Abstract:
(EN) A method for preparing CdS nanorods, the preparation method comprising the following steps: S1, mixing cadmium acetate with trioctylphosphine, stirring and heating under a nitrogen atmosphere, and then injecting a sulfur solution into the mixture so as to carry out a reaction; S2, cooling the solution to room temperature after the reaction, adding anhydrous methanol so as to precipitate CdS nanorods, and washing the CdS nanorods by using anhydrous ethanol; S3, performing wet processing on a film of CdS nanorods by using CdCl2. By means of performing CdCl2 wet processing on the film of CdS nanorods, the crystallinity of the film is improved, defective state density is reduced, short circuit current density is greatly improved, and the service life of a battery is extended.
(FR) L'invention concerne un procédé de préparation de nanotiges en CdS, le procédé de préparation consistant : S1, à mélanger de l'acétate de cadmium avec de la trioctylphosphine, à agiter et à chauffer sous atmosphère d'azote puis à injecter une solution de soufre dans le mélange afin d'effectuer une réaction ; S2, à refroidir la solution à la température ambiante après la réaction, à ajouter du méthanol anhydre en vue de précipiter les nanotiges en CdS et à laver les nanotiges en CdS à l'aide d'éthanol anhydre ; S3, à effectuer un traitement par voie humide sur un film de nanotiges en CdS à l'aide de CdCl2. La réalisation d'un traitement par voie humide à l'aide de CdCl2 sur le film de nanotiges en CdS permet d'améliorer la cristallinité du film, de réduire la densité d'états défectueux, d'améliorer considérablement la densité de courant de court-circuit et de prolonger la durée de vie d'une batterie.
(ZH) 一种CdS纳米棒的制备方法,所述制备方法包括以下步骤:S1、将醋酸镉与三辛基膦混合,在氮气气氛下搅拌加热,然后在混合液中注入硫溶液进行反应;S2、将反应后的溶液冷却至室温,加入无水甲醇,使CdS纳米棒沉降,并用无水乙醇洗涤CdS纳米棒;S3、将CdS纳米棒薄膜采用CdCl 2进行湿法处理。通过对CdS纳米棒薄膜进行CdCl 2湿法处理,提高了薄膜的结晶度,降低了缺陷态密度,大大提高了短路电流密度,可以提高电池寿命。
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African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)