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1. (WO2018235330) SEMICONDUCTOR DEVICE
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Pub. No.: WO/2018/235330 International Application No.: PCT/JP2018/004083
Publication Date: 27.12.2018 International Filing Date: 06.02.2018
IPC:
H01L 23/48 (2006.01) ,H01L 25/07 (2006.01) ,H01L 25/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
48
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
07
the devices being of a type provided for in group H01L29/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18
the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
Applicants:
住友電気工業株式会社 SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP/JP]; 大阪府大阪市中央区北浜四丁目5番33号 5-33, Kitahama 4-chome, Chuo-ku, Osaka-shi, Osaka 5410041, JP
Inventors:
道越 久人 MICHIKOSHI, Hisato; JP
Agent:
伊東 忠重 ITOH, Tadashige; JP
伊東 忠彦 ITOH, Tadahiko; JP
Priority Data:
2017-12026220.06.2017JP
Title (EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMICONDUCTEURS
(JA) 半導体装置
Abstract:
(EN) A semiconductor device having a first electrode terminal, a second electrode terminal, a semiconductor element, the electrode on one surface of which is connected to one surface of the first electrode terminal, wiring for connecting the second electrode terminal and the electrode on the other surface of the semiconductor element to one another, and a resin section formed from an insulating body which covers the semiconductor element, part of the second electrode terminal, and the one surface of the first electrode terminal, wherein a beveled section is formed in one or both of the end sections of the first and second electrode terminals where said terminals face one another.
(FR) La présente invention concerne un dispositif à semi-conducteurs comprenant des première et seconde bornes d'électrode, un élément semi-conducteur dont l'électrode sur une surface est connectée à une surface de la première borne d'électrode, câblage permettant de connecter ensemble la seconde borne d'électrode et l'électrode sur l'autre surface de l'élément semi-conducteur, et une section de résine formée d'un corps isolant qui recouvre l'élément semi-conducteur, une partie de la seconde borne d'électrode ainsi que la surface de la première borne d'électrode, une section biseautée étant formée dans au moins une section des deux sections d'extrémité des première et seconde bornes d'électrode où lesdites bornes se font face.
(JA) 半導体装置は、第1の電極端子と、第2の電極端子と、第1の電極端子の一方の面に、一方の面の電極が接続された半導体素子と、半導体素子の他方の面の電極と第2の電極端子とを接続する配線と、半導体素子、第2の電極端子の一部及び第1の電極端子の一方の面を覆う絶縁体により形成された樹脂部と、を有し、第1の電極端子と第2の電極端子とが対向する端部の少なくとも一方には、面取り部が形成されている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)