Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2018226594) METAL DOPED CARBON BASED HARD MASK REMOVAL IN SEMICONDUCTOR FABRICATION
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/226594 International Application No.: PCT/US2018/035878
Publication Date: 13.12.2018 International Filing Date: 04.06.2018
IPC:
H01L 21/033 (2006.01) ,H01L 21/324 (2006.01) ,H01L 21/3065 (2006.01) ,H01L 21/027 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
033
comprising inorganic layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324
Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
Applicants:
LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway Fremont, California 94538, US
Inventors:
YU, Yongsik; US
CHEUNG, David Wingto; US
OSTROWSKI, Kirk J.; US
GHOSH, Nikkon; US
COLINJIVADI, Karthik S.; US
TAN, Samantha; US
MUSSELWHITE, Nathan; US
KAWAGUCHI, Mark Naoshi; US
Agent:
TSAI, Patricia; US
WEAVER, Jeffrey K.; US
AUSTIN, James E.; US
VILLENEUVE, Joseph M.; US
SAMPSON, Roger S.; US
BERGIN, Denise S.; US
GRIFFITH, John F.; US
SCHOLZ, Christian D.; US
Priority Data:
15/640,34530.06.2017US
62/517,71709.06.2017US
Title (EN) METAL DOPED CARBON BASED HARD MASK REMOVAL IN SEMICONDUCTOR FABRICATION
(FR) ÉLIMINATION DE MASQUE DUR À BASE DE CARBONE DOPÉ AVEC DU MÉTAL DANS LA FABRICATION DE SEMI-CONDUCTEURS
Abstract:
(EN) Methods and apparatuses for etching metal-doped carbon-containing materials are provided herein. Etching methods include using a mixture of an etching gas suitable for etching the carbon component of the metal-doped carbon-containing material and an additive gas suitable for etching the metal component of the metal-doped carbon-containing material and igniting a plasma to selectively remove metal-doped carbon-containing materials relative to underlayers such as silicon oxide, silicon nitride, and silicon, at high temperatures. Apparatuses suitable for etching metal-doped carbon-containing materials are equipped with a high temperature movable pedestal, a plasma source, and a showerhead between a plasma generating region and the substrate.
(FR) La présente invention concerne des procédés et des appareils pour graver des matériaux contenant du carbone dopé avec du métal. Les procédés de gravure consistent à utiliser un mélange d'un gaz de gravure approprié pour graver le composant carbone du matériau contenant du carbone dopé avec du métal et d'un gaz additif approprié pour graver le composant métallique du matériau contenant du carbone dopé avec du métal et allumer un plasma pour éliminer sélectivement des matériaux contenant du carbone dopé avec du métal par rapport à des sous-couches telles que l'oxyde de silicium, le nitrure de silicium et le silicium, à des températures élevées. Des appareils appropriés pour graver des matériaux contenant du carbone dopé avec du métal sont dotés d'un socle mobile à haute température, d'une source de plasma et d'une douchette entre une région de génération de plasma et le substrat.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)