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1. (WO2018226539) METAL-OVERCOATED GRATING AND METHOD
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Pub. No.: WO/2018/226539 International Application No.: PCT/US2018/035723
Publication Date: 13.12.2018 International Filing Date: 01.06.2018
IPC:
H01L 21/768 (2006.01) ,H01L 21/285 (2006.01) ,H01L 21/3065 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283
Deposition of conductive or insulating materials for electrodes
285
from a gas or vapour, e.g. condensation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
Applicants:
LAWRENCE LIVERMORE NATIONAL SECURITY, LLC [US/US]; P.O. Box 808, L-703 Livermore, California 94551, US
Inventors:
NGUYEN, Hoang T.; US
BRITTEN, Jerald; US
Agent:
GALLENSON, Mavis S.; US
LUSINCHI, Laurent P.; US
TOWER, Lee W.; US
BERG, Richard P.; US
KOBZEFF, Joseph M.; US
Priority Data:
62/517,07308.06.2017US
Title (EN) METAL-OVERCOATED GRATING AND METHOD
(FR) RÉSEAU RECOUVERT DE MÉTAL ET PROCÉDÉ
Abstract:
(EN) Metallic overcoated diffraction gratings are particularly useful for high average power laser pulse compression. A dielectric oxide layer is attached to an etch-stop layer, where the dielectric oxide layer comprises a grating pattern including grating lines. Sidewalls of the grating lines taper together toward an upper surface of the dielectric oxide layer. A metallic overcoat is attached to the etch-stop layer and the dielectric oxide layer.
(FR) L'invention concerne des réseaux de diffraction recouverts d'un revêtement métallique qui sont particulièrement utiles pour une compression à impulsions lasers de puissance moyenne élevée. Une couche d'oxyde diélectrique est fixée à une couche d'arrêt de gravure, la couche d'oxyde diélectrique comprenant un motif de réseau comprenant des lignes de réseau. Les parois latérales des lignes de réseau s'amincissent en direction d'une surface supérieure de la couche d'oxyde diélectrique. Un revêtement métallique est fixé à la couche d'arrêt de gravure et à la couche d'oxyde diélectrique.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)