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1. (WO2018226284) ULTRA-LOW POWER MAGNETOELECTRIC MAGNETIC FIELD SENSOR
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Pub. No.: WO/2018/226284 International Application No.: PCT/US2018/022145
Publication Date: 13.12.2018 International Filing Date: 13.03.2018
IPC:
G01R 33/032 (2006.01) ,G01R 33/18 (2006.01) ,G01R 33/00 (2006.01)
G PHYSICS
01
MEASURING; TESTING
R
MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33
Arrangements or instruments for measuring magnetic variables
02
Measuring direction or magnitude of magnetic fields or magnetic flux
032
using magneto-optic devices, e.g. Faraday
G PHYSICS
01
MEASURING; TESTING
R
MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33
Arrangements or instruments for measuring magnetic variables
12
Measuring magnetic properties of articles or specimens of solids or fluids
18
Measuring magnetostrictive properties
G PHYSICS
01
MEASURING; TESTING
R
MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33
Arrangements or instruments for measuring magnetic variables
Applicants:
THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY [US/US]; Naval Research Laboratory 875 North Randolph Street, Suite 1425 Arlington, VA 22203, US
CARNEGIE MELLON UNIVERSITY; 5000 Forbes Avenue Pittsburgh, PA 15213, US
Inventors:
FINKEL, Peter; US
BENNETT, Steven, P.; US
STARUCH, Margo; US
BUSSMANN, Konrad; US
BALDWIN, Jeffrey, W.; US
MATIS, Bernard, R.; US
LACOMB, Ronald; US
ZAPPONE, William; US
LACOMB, Julie; US
METZLER, Meredith; US
GOTTRON, Norman; US
Agent:
BROOME, Kerry, L.; US
Priority Data:
62/470,48913.03.2017US
Title (EN) ULTRA-LOW POWER MAGNETOELECTRIC MAGNETIC FIELD SENSOR
(FR) CAPTEUR DE CHAMP MAGNÉTIQUE MAGNÉTOÉLECTRIQUE À ULTRA-FAIBLE PUISSANCE
Abstract:
(EN) A high-sensitivity and ultra-low power consumption magnetic sensor using a magnetoelectric (ME) composite comprising of magnetostrictive and piezoelectric layers. This sensor exploits the magnetically driven resonance shift of a free-standing magnetoelectric micro-beam resonator. Also disclosed is the related method for making an on-chip micro-resonator magnetic sensor.
(FR) L'invention concerne un capteur magnétique à haute sensibilité et à ultra-faible consommation de puissance utilisant un composite magnétoélectrique (ME) comprenant des couches magnétostrictives et piézoélectriques. Ledit capteur exploite le décalage de résonance à guidage magnétique d'un résonateur à micro-faisceau magnétoélectrique autonome. L'invention concerne également le procédé de fabrication associé d'un capteur magnétique de micro-résonateur sur puce.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)