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1. (WO2018226157) LIGHT EMITTING DEVICE, METHOD OF FABRICATING SAME AND METHOD OF CONTROLLING LIGHT EMISSION
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Pub. No.: WO/2018/226157 International Application No.: PCT/SG2018/050279
Publication Date: 13.12.2018 International Filing Date: 05.06.2018
IPC:
H01L 33/06 (2010.01) ,H01L 51/50 (2006.01) ,H01L 51/56 (2006.01) ,B82Y 20/00 (2011.01) ,H05B 33/02 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
06
within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56
Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
B PERFORMING OPERATIONS; TRANSPORTING
82
NANO-TECHNOLOGY
Y
SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES
20
Nano-optics, e.g. quantum optics or photonic crystals
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
02
Details
Applicants:
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH [SG/SG]; 1 Fusionopolis Way #20-10 Connexis North Tower, Singapore 138632, SG
Inventors:
TEO, Ee Jin; SG
SHI, Yi; SG
YANG, Chengyuan; SG
WU, Qing Yang Steve; SG
CHAN, Yin Thai; SG
XU, Yang; SG
NEO, Chi Jin Darren; SG
Agent:
SPRUSON & FERGUSON (ASIA) PTE LTD; P.O. Box 1531, Robinson Road Post Office Singapore 903031, SG
Priority Data:
10201704585P05.06.2017SG
Title (EN) LIGHT EMITTING DEVICE, METHOD OF FABRICATING SAME AND METHOD OF CONTROLLING LIGHT EMISSION
(FR) DISPOSITIF ÉMETTEUR DE LUMIÈRE, SON PROCÉDÉ DE FABRICATION ET PROCÉDÉ DE COMMANDE D'ÉMISSION DE LUMIÈRE
Abstract:
(EN) A light emitting device, a method of fabricating a light emitting device and a method of controlling light emission. The light emitting device includes a plasmonic structure. The plasmonic structure is configured to have a plurality of localized surface plasmon resonances. The light emitting device also includes a broadband light emitting layer having an emission spectrum substantially overlapping wavelengths of the localized surface plasmon resonances. A spacer layer is disposed between the plasmonic structure and the broadband light emitting layer. A color of light emitted by the broadband light emitting layer is tunable by the localized surface plasmon resonances of the plasmonic structure.
(FR) L'invention concerne un dispositif émetteur de lumière, un procédé de fabrication d'un dispositif émetteur de lumière et un procédé de commande d'émission de lumière. Le dispositif émetteur de lumière comprend une structure plasmonique. La structure plasmonique est configurée pour avoir une pluralité de résonances plasmoniques de surface localisées. Le dispositif émetteur de lumière comprend également une couche émettrice de lumière à large bande ayant un spectre d'émission qui chevauche sensiblement des longueurs d'onde des résonances plasmoniques de surface localisées. Une couche d'espacement est disposée entre la structure plasmonique et la couche émettrice de lumière à large bande. Une couleur de la lumière émise par la couche émettrice de lumière à large bande peut être accordée par les résonances plasmoniques de surface localisées de la structure plasmonique.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)