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1. (WO2018225855) SEMICONDUCTOR LAYER, OSCILLATION ELEMENT, AND SEMICONDUCTOR LAYER MANUFACTURING METHOD
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Pub. No.: WO/2018/225855 International Application No.: PCT/JP2018/022013
Publication Date: 13.12.2018 International Filing Date: 08.06.2018
IPC:
H01L 29/861 (2006.01) ,H01L 29/24 (2006.01) ,H01L 29/868 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
24
including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20 or H01L29/22246
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
868
PIN diodes
Applicants:
株式会社UACJ UACJ CORPORATION [JP/JP]; 東京都千代田区大手町一丁目7番2号 7-2, Otemachi 1-Chome, Chiyoda-ku, Tokyo 1000004, JP
Inventors:
芦澤 公一 ASHIZAWA, Koichi; JP
Agent:
特許業務法人HARAKENZO WORLD PATENT & TRADEMARK HARAKENZO WORLD PATENT & TRADEMARK; 大阪府大阪市北区天神橋2丁目北2番6号 大和南森町ビル Daiwa Minamimorimachi Building, 2-6, Tenjinbashi 2-chome Kita, Kita-ku, Osaka-shi, Osaka 5300041, JP
Priority Data:
2017-11455909.06.2017JP
Title (EN) SEMICONDUCTOR LAYER, OSCILLATION ELEMENT, AND SEMICONDUCTOR LAYER MANUFACTURING METHOD
(FR) COUCHE SEMI-CONDUCTRICE, ÉLÉMENT D'OSCILLATION ET PROCÉDÉ DE FABRICATION DE COUCHE SEMI-CONDUCTRICE
(JA) 半導体層、発振素子及び半導体層の製造方法
Abstract:
(EN) This semiconductor layer comprises a p-n junction in which an n-type semiconductor (Al2O3(n-type )) having a donor level formed therein due to an excessive content of aluminum (Al) in an aluminum oxide film (Al2O3) is joined to a p-type semiconductor (Al2O3(p-type )) having an acceptor level formed therein due to an excessive content of oxygen (O) in an aluminum oxide film (Al2O3).
(FR) Cette couche semi-conductrice comprend une jonction p-n dans laquelle un semi-conducteur de type n (Al2O3(type n)) ayant un niveau donneur formé en son sein en raison d'une teneur excessive en aluminium (Al) dans un film d'oxyde d'aluminium (Al2O3) est relié à un semi-conducteur de type p (Al2O3(type p)) ayant un niveau accepteur formé en son sein en raison d'une teneur excessive en oxygène (O) dans un film d'oxyde d'aluminium (Al2O3).
(JA) 酸化アルミニウム膜(Al2O3)にアルミニウム(Al)を過剰に含有させることによりドナー準位を形成したn型半導体(Al2O3(n型))と、酸化アルミニウム膜(Al2O3)に酸素(O)を過剰に含有させることによりアクセプタ準位を形成したp型半導体(Al2O3(p型))とを接合したpn接合を含む半導体層である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)