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1. (WO2018225668) RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION, AND LIGHT-BLOCKING CONTAINER HAVING RAW MATERIAL CHEMICAL VAPOR DEPOSITION CONTAINED THEREIN AND METHOD FOR PRODUCING SAME
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Pub. No.: WO/2018/225668 International Application No.: PCT/JP2018/021318
Publication Date: 13.12.2018 International Filing Date: 04.06.2018
IPC:
C23C 16/40 (2006.01) ,C07F 5/00 (2006.01) ,C07F 17/00 (2006.01) ,H01B 13/00 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40
Oxides
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
5
Compounds containing elements of the 3rd Group of the Periodic System
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
17
Metallocenes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
13
Apparatus or processes specially adapted for manufacturing conductors or cables
Applicants:
株式会社高純度化学研究所 KOJUNDO CHEMICAL LABORATORY CO., LTD. [JP/JP]; 埼玉県坂戸市千代田5丁目1番28号 1-28, Chiyoda 5-chome, Sakado-shi, Saitama 3500284, JP
Inventors:
水谷 文一 MIZUTANI Fumikazu; JP
東 慎太郎 HIGASHI Shintaro; JP
Agent:
木下 茂 KINOSHITA Shigeru; JP
Priority Data:
2017-11395709.06.2017JP
Title (EN) RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION, AND LIGHT-BLOCKING CONTAINER HAVING RAW MATERIAL CHEMICAL VAPOR DEPOSITION CONTAINED THEREIN AND METHOD FOR PRODUCING SAME
(FR) MATIÈRE PREMIÈRE DESTINÉE À UN DÉPÔT CHIMIQUE EN PHASE VAPEUR, ET RÉCIPIENT DE BLOCAGE DE LUMIÈRE CONTENANT UN DÉPÔT CHIMIQUE EN PHASE VAPEUR DE MATIÈRE PREMIÈRE ET SON PROCÉDÉ DE PRODUCTION
(JA) 化学蒸着用原料、ならびに、化学蒸着用原料入り遮光容器およびその製造方法
Abstract:
(EN) A raw material for chemical vapor deposition (CVD), which is a raw material for producing an indium oxide thin film by chemical vapor deposition, can be stored for a long period, and is easy to handle upon use when chemical vapor deposition is carried out; and a method for storing the raw material. A raw material for chemical vapor deposition, characterized by containing an alkylcyclopentadienylindium (I) (C5H4R1-In) as a main component, also containing at least one component selected from an alkylcyclopentadiene (C5H5R2), a dialkylcyclopentadiene ((C5H5R3)2), a trisalkylcyclopentadienylindium (III) ((C5H4R4)3-In) and triscyclopentadienyl indium (III) as a sub-component (wherein R1 to R4 independently represent an alkyl group having 1 to 4 carbon atoms), and containing substantially no solvent.
(FR) L'invention concerne une matière première destinée à un dépôt chimique en phase vapeur (CVD), qui est une matière première destinée à produire un film mince d'oxyde d'indium par dépôt chimique en phase vapeur, qui peut être stockée pendant une longue période et qui est facile à manipuler lors de l'utilisation lorsque le dépôt chimique en phase vapeur est réalisé ; et un procédé destiné à stocker la matière première. Selon l'invention, la matière première destinée à un dépôt chimique en phase vapeur est caractérisée en ce qu'elle contient un alkylcyclopentadiénylindium (I) (C5H4R1-In) en tant que constituant principal, en ce qu'elle contient également au moins un constituant choisi parmi un alkylcyclopentadiène (C5H5R2), un dialkylcyclopentadiène ((C5H5R3)2), un trisalkylcyclopentadiénylindium (III) ((C5H4R4)3-In) et un triscyclopentadiényle indium (III) en tant que sous-constituant (où R1 à R4 représentent indépendamment un groupe alkyle possédant 1 à 4 atomes de carbone), et en ce qu'elle ne contient sensiblement aucun solvant.
(JA) 化学蒸着(CVD)により、酸化インジウム薄膜を製造するための原料であって、長期間の保存が可能で、化学蒸着を行うに際して、使用時の取り扱いが容易な化学蒸着用原料およびその保存方法を提供する。アルキルシクロペンタジエニルインジウム(I)(C541-In)を主成分とし、アルキルシクロペンタジエン(C552)、ジアルキルシクロペンタジエン((C5532)、トリスアルキルシクロペンタジエニルインジウム(III)((C5443-In)、およびトリスシクロペンタジエニルインジウム(III)のいずれか一種以上を副成分として含有し(R1~R4はそれぞれ炭素原子数1~4のアルキル基を表す。)、実質的に溶媒を含まないことを特徴とする化学蒸着用原料。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)