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1. (WO2018225415) SUBSTRATE AND METHOD FOR PRODUCING FILM SUBSTRATE
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Pub. No.: WO/2018/225415 International Application No.: PCT/JP2018/016866
Publication Date: 13.12.2018 International Filing Date: 25.04.2018
Chapter 2 Demand Filed: 29.10.2018
IPC:
H01L 41/318 (2013.01) ,H01L 21/316 (2006.01) ,H01L 41/113 (2006.01) ,H01L 41/187 (2006.01) ,H01L 41/257 (2013.01) ,H04R 17/00 (2006.01) ,H04R 31/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22
Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
31
Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base
314
by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing
318
by sol-gel deposition
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
316
composed of oxides or glassy oxides or oxide-based glass
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
Piezo-electric or electrostrictive elements
113
with mechanical input and electrical output
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16
Selection of materials
18
for piezo-electric or electrostrictive elements
187
Ceramic compositions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22
Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
253
Treating devices or parts thereof to modify a piezo-electric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
257
by polarising
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
R
LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
17
Piezo-electric transducers; Electrostrictive transducers
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
R
LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
31
Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
Applicants:
国立大学法人熊本大学 NATIONAL UNIVERSITY CORPORATION KUMAMOTO UNIVERSITY [JP/JP]; 熊本県熊本市中央区黒髪二丁目39番1号 39-1, Kurokami 2-chome, Chuo-ku, Kumamoto-shi, Kumamoto 8608555, JP
Inventors:
小林 牧子 KOBAYASHI Makiko; JP
中妻 啓 NAKATSUMA Kei; JP
田邉 将之 TANABE Masayuki; JP
Agent:
羽立 章二 HADATE Shoji; JP
Priority Data:
2017-11469409.06.2017JP
Title (EN) SUBSTRATE AND METHOD FOR PRODUCING FILM SUBSTRATE
(FR) SUBSTRAT ET PROCÉDÉ DE PRODUCTION DE SUBSTRAT À FILM
(JA) 基板及び膜基板生産方法
Abstract:
(EN) Proposed is a method for producing a film substrate, by which a film substrate is produced by forming a film on a substrate, said film being capable of operating at high temperatures, by mixing a powder of a ferroelectric body and a sol-gel solution of a dielectric body with each other. According to the present invention, a film substrate is produced by forming a film on a substrate using a mixture of a powder and a sol-gel solution. The powder is composed of CaBi2Ta2O9. The mixture of a powder and a sol-gel solution is a mixture of a CaBi4Ti4O15 powder and a sol-gel solution of Bi4Ti3O12 and/or (Ba, Sr)TiO3. Consequently, a high sound wave transducer or a pressure sensitive sensor, which operates properly at 700°C and even at extremely high temperatures exceeding 800°C, is able to be produced. In addition, according to the present invention, polarization is able to be performed at, for example, 400°C or even around room temperature.
(FR) L'invention concerne un procédé de production d'un substrat à film permettant de produire un substrat à film par formation d'un film sur un substrat, ledit film pouvant fonctionner à des températures élevées, par mélange d'une poudre d'un corps ferroélectrique et d'une solution sol-gel d'un corps diélectrique entre elles. Selon la présente invention, un substrat à film est produit par formation d'un film sur un substrat à l'aide d'un mélange d'une poudre et d'une solution sol-gel. La poudre est composée de CaBi2Ta2O9. Le mélange d'une poudre et d'une solution sol-gel est un mélange d'une poudre de CaBi4Ti4O15 et d'une solution sol-gel de Bi4Ti3O12 et/ou de (Ba, Sr)TiO3. Par conséquent, un transducteur à ondes sonores élevées ou un capteur sensible à la pression, qui fonctionne correctement à 700 °C et même à des températures extrêmement élevées dépassant 800 °C, peut être produit. De plus, selon la présente invention, une polarisation peut être effectuée, par exemple, à 400 °C ou même à une température proche de la température ambiante.
(JA) 基板の上に、強誘電体の粉末と誘電体のゾルゲル溶液を混合して、高温下において動作可能な膜を作製して膜基板を生産する膜基板生産方法を提案する。基板の上に、粉末とゾルゲル溶液の混合体を用いて膜を作製して、膜基板を生産する。粉末はCaBi2Ta29である。また、粉末とゾルゲル溶液の混合体は、CaBi4Ti415の粉末と、Bi4Ti312及び/又は(Ba,Sr)TiO3のゾルゲル溶液の混合体である。これにより、700℃、さらには、800℃を超える極めて高い温度下でも正常に動作する高音波トランスデューサや感圧センサを作製することができる。さらに、分極処理は、例えば400℃、さらには室温程度の温度で可能である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)