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1. (WO2018225388) THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION ELEMENT AND PRODUCTION METHOD OF THERMOELECTRIC CONVERSION MATERIAL
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/225388 International Application No.: PCT/JP2018/015945
Publication Date: 13.12.2018 International Filing Date: 18.04.2018
IPC:
H01L 35/14 (2006.01) ,B82Y 30/00 (2011.01) ,B82Y 40/00 (2011.01) ,C01B 33/06 (2006.01) ,H01L 35/26 (2006.01) ,H01L 35/34 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12
Selection of the material for the legs of the junction
14
using inorganic compositions
B PERFORMING OPERATIONS; TRANSPORTING
82
NANO-TECHNOLOGY
Y
SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES
30
Nano-technology for materials or surface science, e.g. nano-composites
B PERFORMING OPERATIONS; TRANSPORTING
82
NANO-TECHNOLOGY
Y
SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES
40
Manufacture or treatment of nano-structures
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
B
NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
33
Silicon; Compounds thereof
06
Metal silicides
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12
Selection of the material for the legs of the junction
26
using compositions changing continuously or discontinuously inside the material
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35
Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
34
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
住友電気工業株式会社 SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP/JP]; 大阪府大阪市中央区北浜四丁目5番33号 5-33, Kitahama 4-chome, Chuo-ku, Osaka-shi, Osaka 5410041, JP
Inventors:
足立 真寛 ADACHI Masahiro; JP
木山 誠 KIYAMA Makoto; JP
山本 喜之 YAMAMOTO Yoshiyuki; JP
Agent:
中田 元己 NAKATA Motomi; JP
森田 剛史 MORITA Takeshi; JP
高城 政浩 TAKAGI Masahiro; JP
緒方 大介 OGATA Daisuke; JP
Priority Data:
2017-11326608.06.2017JP
Title (EN) THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION ELEMENT AND PRODUCTION METHOD OF THERMOELECTRIC CONVERSION MATERIAL
(FR) MATÉRIAU DE CONVERSION THERMOÉLECTRIQUE, ÉLÉMENT DE CONVERSION THERMOÉLECTRIQUE ET PROCÉDÉ DE PRODUCTION DE MATÉRIAU DE CONVERSION THERMOÉLECTRIQUE
(JA) 熱電変換材料、熱電変換素子および熱電変換材料の製造方法
Abstract:
(EN) This plate shape thermoelectric conversion material comprises a first primary surface, and a second primary surface opposite of the first primary surface, and is formed from a plurality of semiconductor particles in contact with one another. The semiconductor particles comprise a particle formed from a semiconductor containing an amorphous phase, and an oxide layer covering the particle. The distance between the first primary surface and the second primary surface exceeds 0.5 mm.
(FR) L'invention concerne un matériau de conversion thermoélectrique en forme de plaque, comprenant une première surface principale et une deuxième surface principale opposée à la première surface principale et formé à partir d'une pluralité de particules en semi-conducteur en contact les unes avec les autres. Les particules en semi-conducteur comprennent une particule formée à partir d'un semi-conducteur contenant une phase amorphe, et une couche d'oxyde recouvrant la particule. La distance entre la première surface primaire et la deuxième surface primaire est supérieure à 0,5 mm.
(JA) 第1の主面と前記第1の主面と反対側の第2の主面を有する板状の熱電変換材料であって、互いに接触した複数の半導体粒から形成される。半導体粒は、非晶質相を含む半導体からなる粒子と、粒子を被覆する酸化層と、を有する。第1の主面と第2の主面との距離が0.5mmを超える。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)