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1. (WO2018224977) LOW OXYGEN CLEANING FOR CMP EQUIPMENT
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Pub. No.: WO/2018/224977 International Application No.: PCT/IB2018/054050
Publication Date: 13.12.2018 International Filing Date: 06.06.2018
IPC:
C11D 1/00 (2006.01)
C CHEMISTRY; METALLURGY
11
ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
D
DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
1
Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
Applicants:
INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road Armonk, New York 10504, US
IBM UNITED KINGDOM LIMITED [GB/GB]; PO Box 41, North Harbour Portsmouth Hampshire PO6 3AU, GB (MG)
IBM (CHINA) INVESTMENT COMPANY LIMITED [CN/CN]; 25/F, Pangu Plaza No. 27, Central North 4th Ring Road, Chaoyang District Beijing 100101, CN (MG)
Inventors:
CANAPERI, Donald, Francis; US
CHINTHAMANIPETA, Pavan; US
PATLOLLA, Raghuveer, Reddy; US
PEETHALA, Cornelius, Brown; US
Agent:
GRAHAM, Timothy; GB
Priority Data:
15/618,30909.06.2017US
15/830,31304.12.2017US
Title (EN) LOW OXYGEN CLEANING FOR CMP EQUIPMENT
(FR) NETTOYAGE À FAIBLE TENEUR EN OXYGÈNE POUR ÉQUIPEMENT CMP
Abstract:
(EN) A method is presented for post chemical mechanical polishing (PCMP) clean for cleaning a chemically- mechanically polished semiconductor wafer. The method includes planarizing the semiconductor wafer, subjecting the semiconductor wafer to a de-oxygenated mixture of Dl water and PCMP solution, and applying a de-oxygenated environment during the cleaning. The solution can be de-oxygenated by nitrogen degas or by introducing a reducing agent. The environment can be de-oxygenated by purging with an inert gas, such as nitrogen.
(FR) L'invention concerne un procédé de nettoyage mécanique post-chimique (PCMP) permettant de nettoyer une tranche de semi-conducteur polie chimiquement et mécaniquement. Le procédé comprend la planarisation de la tranche de semi-conducteur, la soumission de la tranche de semi-conducteur à un mélange désoxygéné d'eau Dl et de solution de PCMP, et l'application d'un environnement désoxygéné pendant le nettoyage. La solution peut être désoxygénée par un dégazage à l'azote ou par introduction d'un agent réducteur. L'environnement peut être désoxygéné par purge avec un gaz inerte, tel que l'azote.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)