Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2018224927) MEMRISTIVE STRUCTUE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/224927 International Application No.: PCT/IB2018/053936
Publication Date: 13.12.2018 International Filing Date: 01.06.2018
IPC:
H01L 27/12 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12
the substrate being other than a semiconductor body, e.g. an insulating body
Applicants:
INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road Armonk, New York 10504, US
IBM UNITED KINGDOM LIMITED [GB/GB]; PO Box 41, North Harbour Portsmouth Hampshire PO6 3AU, GB (MG)
IBM (CHINA) INVESTMENT COMPANY LIMITED [CN/CN]; 25/F, Pangu Plaza No.27, Central North 4th Ring Road, Chaoyang District, Beijing 100101, CN (MG)
Inventors:
BREW, Kevin; US
NEWNS, Dennis; US
KIM, Seyoung; US
GERSHON, Talia, Simcha; US
TODOROV, Teodor, Krassimirov; US
Agent:
LITHERLAND, David; GB
Priority Data:
15/616,32007.06.2017US
Title (EN) MEMRISTIVE STRUCTUE
(FR) STRUCTURE MEMRISTIVE
Abstract:
(EN) A method of fabricating a memristive structure for symmetric modulation between resistance states is presented. The method includes forming a first electrode and a second electrode over an insulating substrate, forming an anode contacting the first and second electrodes, forming an ionic conductor over the anode, forming a cathode of the same material as the anode over the ionic conductor, forming a third electrode over the cathode, and enabling bidirectional transport of ions between the anode and cathode resulting in a resistance adjustment of the memristive structure, the anode and the cathode being formed from metastable mixed conducting materials with ion concentration dependent conductivity.
(FR) L'invention concerne un procédé de fabrication d'une structure memristive de modulation symétrique entre des états de résistance. Le procédé consiste à former une première électrode et une deuxième électrode sur un substrat isolant, à former une anode en contact avec les première et deuxième électrodes, à former un conducteur ionique sur l'anode, à former une cathode du même matériau que l'anode sur le conducteur ionique, à former une troisième électrode sur la cathode, et à permettre un transport bidirectionnel d'ions entre l'anode et la cathode, ce qui entraîne un ajustement de résistance de la structure memristive, l'anode et la cathode étant formées à partir de matériaux conducteurs mélangés métastables ayant une conductivité dépendant de la concentration ionique.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)