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1. (WO2018224829) CIGS NANOPARTICLE INK FORMULATION WITH A HIGH CRACK-FREE LIMIT
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Pub. No.: WO/2018/224829 International Application No.: PCT/GB2018/051546
Publication Date: 13.12.2018 International Filing Date: 06.06.2018
IPC:
C09D 11/00 (2014.01) ,C09D 11/02 (2014.01) ,H01L 31/032 (2006.01)
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
D
COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
11
Inks
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
D
COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
11
Inks
02
Printing inks
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0256
characterised by the material
0264
Inorganic materials
032
including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272-H01L31/0312154
Applicants:
NANOCO TECHNOLOGIES LTD [GB/GB]; 46 Grafton Street Manchester M13 9NT, GB
Inventors:
ALLEN, Cary; GB
Agent:
MARKS & CLERK LLP; 1 New York Street Manchester Greater Manchester M1 4HD, GB
Priority Data:
62/516,36607.06.2017US
Title (EN) CIGS NANOPARTICLE INK FORMULATION WITH A HIGH CRACK-FREE LIMIT
(FR) FORMULATION D'ENCRE À BASE DE NANOPARTICULES DE CIGS AYANT UNE LIMITE SANS FISSURE ÉLEVÉE
Abstract:
(EN) A method for formulating a CIGS nanoparticle-based ink, which can be processed to form a thin film with a crack-free limit (CFL) of 500 nm or greater, comprises combining CIGS nanoparticles and binary chalcogenide nanoparticles in a solvent.
(FR) La présente invention concerne un procédé de formulation d'une encre à base de nanoparticules CIGS, qui peut être traitée pour former un film mince ayant une limite sans fissure (CFL) de 500 nm ou plus, lequel procédé consiste à combiner des nanoparticules CIGS et des nanoparticules de chalcogénure binaire dans un solvant.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)