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1. (WO2018224449) ENERGY CONTROLLER FOR EXCIMER-LASER SILICON CRYSTALLIZATION
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Pub. No.: WO/2018/224449 International Application No.: PCT/EP2018/064651
Publication Date: 13.12.2018 International Filing Date: 04.06.2018
IPC:
H01L 21/20 (2006.01) ,H01S 3/13 (2006.01) ,H01S 3/134 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
3
Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
10
Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
13
Stabilisation of laser output parameters, e.g. frequency, amplitude
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
3
Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
10
Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
13
Stabilisation of laser output parameters, e.g. frequency, amplitude
131
by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
134
in gas lasers
Applicants:
COHERENT LASERSYSTEMS GMBH & CO. KG [DE/DE]; Hans-Böckler-Strasse 12 37079 Göttingen, DE
Inventors:
BRAGIN, Igor; DE
Agent:
SACKIN, Robert; REDDIE & GROSE LLP The White Chapel Building 10 Whitechapel High Street London Greater London E1 8QS, GB
Priority Data:
15/613,66205.06.2017US
Title (EN) ENERGY CONTROLLER FOR EXCIMER-LASER SILICON CRYSTALLIZATION
(FR) RÉGULATEUR D'ÉNERGIE POUR CRISTALLISATION DE SILICIUM PAR LASER À EXCIMÈRE
Abstract:
(EN) Excimer laser annealing apparatus (40) includes an excimer laser (42) delivering laser-radiation pulses to a silicon layer (58) supported on a substrate translated with respect to the laser pulses such that the consecutive pulses overlap on the substrate. The energy of each of the laser-radiation pulses is monitored, transmitted to control-electronics (48), and the energy of a next laser pulse is adjusted by a high- pass digital filter (62).
(FR) L'appareil de recuit au laser à excimère (40) de l'invention comprend un laser à excimère (42) qui envoie des impulsions de rayonnement laser à une couche de silicium (58) portée sur un substrat translaté par rapport aux impulsions laser, de sorte que les impulsions consécutives se chevauchent sur le substrat. L'énergie de chaque impulsion de rayonnement laser est surveillée, transmise à l'électronique de commande (48), et l'énergie d'une impulsion laser suivante est régulée par un filtre numérique passe-haut (62).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)