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1. (WO2018223871) THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, ARRAY SUBSTRATE, DISPLAY PANEL AND DISPLAY APPARATUS
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Pub. No.: WO/2018/223871 International Application No.: PCT/CN2018/088844
Publication Date: 13.12.2018 International Filing Date: 29.05.2018
IPC:
H01L 29/786 (2006.01) ,H01L 21/336 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
Applicants:
京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO. , LTD. [CN/CN]; 中国北京市 朝阳区酒仙桥路10号 No.10 Jiuxianqiao Rd. , Chaoyang District Beijing 100015, CN
Inventors:
胡合合 HU, Hehe; CN
Agent:
中科专利商标代理有限责任公司 CHINA SCIENCE PATENT & TRADEMARK AGENT LTD.; 中国北京市 海淀区西三环北路87号4-1105室 Suite 4-1105, No. 87, West 3rd Ring North Rd. Haidian District Beijing 100089, CN
Priority Data:
201710422080.307.06.2017CN
Title (EN) THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, ARRAY SUBSTRATE, DISPLAY PANEL AND DISPLAY APPARATUS
(FR) TRANSISTOR À COUCHES MINCES ET SON PROCÉDÉ DE FABRICATION, SUBSTRAT DE RÉSEAU, PANNEAU D’AFFICHAGE ET APPAREIL D’AFFICHAGE
(ZH) 薄膜晶体管及其制作方法、阵列基板、显示面板及显示装置
Abstract:
(EN) Provided are a thin film transistor and a manufacturing method therefor, the thin film transistor comprising: a substrate (1), a source electrode (2) located on the substrate (1), a drain electrode (3) located on the source electrode (2), an active layer (4) located on the substrate (1) and connected between the source electrode (2) and the drain electrode (3), and a grid electrode (5) located on the substrate (1), wherein a first insulation layer (6) used for insulating the source electrode (2) from the drain electrode (3) is arranged between the source electrode (2) and the drain electrode (3); a second insulation layer (7) used for insulating the active layer (4) from the grid electrode (5) is arranged between the active layer (4) and the grid electrode (5); the active layer (4) comprises a first side face (43) extending in a direction where the active layer intersects with an upper surface of the substrate (1); the first side face (43) is connected with the source electrode (2) and the drain electrode (3); and the grid electrode (5) surrounds the first side face (43).
(FR) L'invention concerne un transistor à couches minces et son procédé de fabrication, le transistor à couches minces comprenant : un substrat (1), une électrode de source (2) située sur le substrat (1), une électrode de drain (3) située sur l'électrode de source (2), une couche active (4) située sur le substrat (1) et connectée entre l'électrode de source (2) et l'électrode de drain (3), et une électrode de grille (5) située sur le substrat (1), une première couche d'isolation (6) utilisée pour isoler l'électrode de source (2) de l'électrode de drain (3) étant disposée entre l'électrode de source (2) et l'électrode de drain (3); une seconde couche d'isolation (7) utilisée pour isoler la couche active (4) de l'électrode de grille (5) est disposée entre la couche active (4) et l'électrode de grille (5); la couche active (4) comprend une première face latérale (43) s'étendant dans une direction où la couche active croise une surface supérieure du substrat (1); la première face latérale (43) est connectée à l'électrode de source (2) et à l'électrode de drain (3); et l'électrode de grille (5) entoure la première face latérale (43).
(ZH) 一种薄膜晶体管及其制作方法,薄膜晶体管包括:基板(1);位于基板(1)上的源极(2);位于源极(2)上的漏极(3);位于基板(1)上且连接于源极(2)与漏极(3)之间的有源层(4);以及位于基板(1)上的栅极(5)。源极(2)与漏极(3)之间设有用于将源极(2)与漏极(3)绝缘的第一绝缘层(6);有源层(4)与栅极(5)之间设有用于将有源层(4)与栅极(5)绝缘的第二绝缘层(7)。有源层(4)包括沿相交于基板(1)的上表面的方向延伸的第一侧面(43),第一侧面(43)连接源极(2)与漏极(3),栅极(5)包围第一侧面(43)。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)