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1. (WO2018223809) QLED DEVICE AND MANUFACTURING METHOD THEREOF
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Pub. No.: WO/2018/223809 International Application No.: PCT/CN2018/086559
Publication Date: 13.12.2018 International Filing Date: 11.05.2018
IPC:
H01L 51/50 (2006.01) ,H01L 51/56 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56
Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants:
京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN/CN]; 中国北京市 朝阳区酒仙桥路10号 No.10 Jiuxianqiao Rd., Chaoyang District Beijing 100015, CN
Inventors:
宋莹莹 SONG, Yingying; CN
Agent:
北京市柳沈律师事务所 LIU, SHEN & ASSOCIATES; 中国北京市 海淀区彩和坊路10号1号楼10层 10th Floor, Building 1, 10 Caihefang Road, Haidian District Beijing 100080, CN
Priority Data:
201710414183.505.06.2017CN
Title (EN) QLED DEVICE AND MANUFACTURING METHOD THEREOF
(FR) DISPOSITIF QLED ET SON PROCÉDÉ DE FABRICATION
(ZH) 一种QLED器件及其制作方法
Abstract:
(EN) Provided are a QLED device and a manufacturing method thereof capable of solving a technical problem in which poor hole injection and transport performance results in poor performance of QLED devices. The QLED device comprises a substrate (1), an ITO electrode layer (2), a p-doped dielectric layer (3), a hole transport layer (4), a quantum dot light emitting layer (5), an electron transport layer (6), and a top electrode layer (7).
(FR) L'invention concerne un dispositif QLED et un procédé de fabrication de celui-ci capables de résoudre un problème technique dans lequel une mauvaise injection de trous et une performance de transport ont pour résultat de mauvaises performances de dispositifs QLED. Le dispositif QLED comprend un substrat (1), une couche d'électrode ITO (2), une couche diélectrique dopée p (3), une couche de transport de trous (4), une couche électroluminescente à points quantiques (5), une couche de transport d'électrons (6), et une couche d'électrode supérieure (7).
(ZH) 一种QLED器件及其制作方法,解决了QLED器件的空穴注入与传输的性能较差,导致QLED器件的性能较差的技术问题。该QLED器件包括:基板(1),以及依次层叠设置在基板(1)的ITO电极层(2)、P掺杂的介质层(3)、空穴传输层(4)、量子点发光层(5)、电子传输层(6)和顶电极层(7)。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)