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1. (WO2018223427) THIN FILM TRANSISTOR, TFT SUBSTRATE, AND DISPLAY PANEL
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/223427 International Application No.: PCT/CN2017/089460
Publication Date: 13.12.2018 International Filing Date: 22.06.2017
IPC:
H01L 29/786 (2006.01) ,G02F 1/1368 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136
Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362
Active matrix addressed cells
1368
in which the switching element is a three-electrode device
Applicants:
深圳市华星光电半导体显示技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. [CN/CN]; 中国广东省深圳市 光明新区公明街道塘明大道9-2号 No.9-2, Tangming Road, Gongming Street, Guangming New District Shenzhen, Guangdong 518132, CN
Inventors:
石龙强 SHI, Longqiang; CN
陈书志 CHEN, Shu-jhih; CN
Agent:
深圳市威世博知识产权代理事务所(普通合伙) CHINA WISPRO INTELLECTUAL PROPERTY LLP.; 中国广东省深圳市 南山区高新区粤兴三道8号中国地质大学产学研基地中地大楼A806 Room A806 Zhongdi Building, China University of Geosciences Base, No.8 Yuexing 3rd Road, High-Tech Industrial Estate, Nanshan District Shenzhen, Guangdong 518057, CN
Priority Data:
201710423982.907.06.2017CN
Title (EN) THIN FILM TRANSISTOR, TFT SUBSTRATE, AND DISPLAY PANEL
(FR) TRANSISTOR À COUCHES MINCES, SUBSTRAT DE TRANSISTOR À COUCHES MINCES ET PANNEAU D'AFFICHAGE
(ZH) 一种薄膜晶体管、TFT基板以及显示面板
Abstract:
(EN) A thin film transistor, TFT substrate, and display panel. The thin film transistor (30) comprises a gate (31), a source (33), and a drain (32). The source is configured as a first bent structure (331). The drain is configured as a second bent structure (321). The gate is configured as a third bent structure (311). The first bent structure of the source is arranged opposite to the second bent structure of the drain. The third bent structure of the gate is arranged between the first bent structure of the source and the second bent structure of the drain, thus facilitating fabrication of a thin bezel of a display panel.
(FR) La présente invention concerne un transistor à couches minces, un substrat de transistor à couches minces et un panneau d'affichage. Le transistor à couches minces (30) comprend une grille (31), une source (33) et un drain (32). La source est configurée sous la forme d'une première structure courbée (331). Le drain est configuré sous la forme d'une seconde structure courbée (321). La grille est configurée sous la forme d'une troisième structure courbée (311). La première structure courbée de la source est disposée à l'opposé de la seconde structure courbée du drain. La troisième structure courbée de la grille est disposée entre la première structure courbée de la source et la seconde structure courbée du drain, ce qui facilite la fabrication d'un cadre mince d'un panneau d'affichage.
(ZH) 一种薄膜晶体管、TFT基板以及显示面板。薄膜晶体管(30)包括栅极(31)、源极(33)以及漏极(32),其中,源极设置为第一弯曲结构(331),漏极设置为第二弯曲结构(321),栅极设置为第三弯曲结构(311),其中,源极的第一弯曲结构与漏极的第二弯曲结构相对设置,栅极的第三弯曲结构设置在源极的第一弯曲结构和漏极的第二弯曲结构之间,从而有利于显示面板的窄边框的制作。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)