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1. (WO2018223391) MICRO-LED ARRAY TRANSFER METHOD, MANUFACTURING METHOD AND DISPLAY DEVICE
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Pub. No.: WO/2018/223391 International Application No.: PCT/CN2017/087774
Publication Date: 13.12.2018 International Filing Date: 09.06.2017
IPC:
H01L 33/00 (2010.01) ,H01L 21/70 (2006.01) ,H01L 21/50 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
Applicants:
GOERTEK. INC [CN/CN]; No. 268 Dongfang Road, Hi-Tech Industry District Weifang, Shandong 261031, CN
Inventors:
ZOU, Quanbo; CN
CHEN, Peixuan; CN
FENG, Xiangxu; CN
GAN, Tao; CN
ZHANG, Xiaoyang; CN
WANG, Zhe; CN
Agent:
BEYOND TALENT PATENT AGENT FIRM; Room 1202, Kuntai Building #10 Chaoyangmenwai Str., Chaoyang District, Beijing 100020, CN
Priority Data:
Title (EN) MICRO-LED ARRAY TRANSFER METHOD, MANUFACTURING METHOD AND DISPLAY DEVICE
(FR) PROCÉDÉ DE TRANSFERT DE RÉSEAU DE MICRO-DEL, PROCÉDÉ DE FABRICATION ET DISPOSITIF D'AFFICHAGE
Abstract:
(EN) A micro-LED transfer method, manufacturing method and display device are provided. The micro-LED transfer method comprises: bonding the micro-LED array (204) on a first substrate (201) onto a receiving substrate (202) through micro-bumps (206), wherein the first substrate (201) is laser transparent; applying underfill (208) into a gap between the first substrate (201) and the receiving substrate (202); irradiating laser (207) onto the micro-LED array (204) from a side of the first substrate (201) to lift-off the micro-LED array (204) from the first substrate (201); and removing the underfill (208). The bonding strength may be improved during a transfer of a micro-LED array (204).
(FR) L'invention concerne un procédé de transfert de micro-DEL, un procédé de fabrication et un dispositif d'affichage. Le procédé de transfert de micro-DEL consiste à : lier le réseau de micro-DEL (204) sur un premier substrat (201) sur un substrat de réception (202) à travers des micro-bosses (206), le premier substrat (201) étant transparent au laser; appliquer un sous-remplissage (208) dans un espace entre le premier substrat (201) et le substrat de réception (202); irradier un laser (207) sur le réseau de micro-DEL (204) à partir d'un côté du premier substrat (201) pour soulever le réseau de micro-DEL (204) à partir du premier substrat (201); et retirer le sous-remplissage (208). La force de liaison peut être améliorée pendant un transfert d'un réseau de micro-DEL (204).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)