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1. (WO2018222942) QUANTUM CASCADE LASER TRACE-GAS DETECTION FOR IN-SITU MONITORING, PROCESS CONTROL, AND AUTOMATING END-POINT DETERMINATION OF CHAMBER CLEAN IN SEMICONDUCTOR MANUFACTURING
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Pub. No.: WO/2018/222942 International Application No.: PCT/US2018/035500
Publication Date: 06.12.2018 International Filing Date: 31.05.2018
IPC:
G01N 21/3504 (2014.01) ,G01N 21/03 (2006.01) ,G01N 21/31 (2006.01) ,G01N 21/39 (2006.01)
[IPC code unknown for G01N 21/3504]
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21
Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible, or ultra-violet light
01
Arrangements or apparatus for facilitating the optical investigation
03
Cuvette constructions
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21
Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible, or ultra-violet light
17
Systems in which incident light is modified in accordance with the properties of the material investigated
25
Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
31
Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21
Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible, or ultra-violet light
17
Systems in which incident light is modified in accordance with the properties of the material investigated
25
Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
31
Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
39
using tunable lasers
Applicants:
AECOM (DELAWARE CORPORATION) [US/US]; 1999 Avenue Of The Stars, Suite 260 Los Angeles, CA 90067, US
Inventors:
GALLARDO, Ignacio; US
BELLON, Alex; US
BENAWAY, Bryan; US
HALL, Steven; US
MODRAK, Mark; US
SPRINGER, Sean; US
Agent:
ALTMAN, Daniel, E.; US
Priority Data:
62/513,95301.06.2017US
62/611,12528.12.2017US
Title (EN) QUANTUM CASCADE LASER TRACE-GAS DETECTION FOR IN-SITU MONITORING, PROCESS CONTROL, AND AUTOMATING END-POINT DETERMINATION OF CHAMBER CLEAN IN SEMICONDUCTOR MANUFACTURING
(FR) DÉTECTION DE GAZ À L'ÉTAT DE TRACES PAR LASER À CASCADE QUANTIQUE POUR LA SURVEILLANCE IN SITU, LA RÉGULATION DE PROCESSUS ET L'AUTOMATISATION DE LA DÉTERMINATION DE POINT FINAL DE NETTOYAGE DE CHAMBRE DANS LA PRODUCTION DE SEMI-CONDUCTEURS
Abstract:
(EN) A process for in-situ monitoring, process control, and the determination of an endpoint state of a chamber clean during the semiconductor manufacturing process attaches a tunable quantum cascade laser (QCL) (20) to the processing chamber (22) or the foreline of a semiconductor fabrication tool to detect concentrations of process gases, by-product gases, and other gaseous compounds affecting the manufacturing process, and to determine when concentrations of clean or by-product gases fall below a predetermined threshold. The QLC detection system then sends an automated electronic signal to the semiconductor manufacturing control systems to automatically change gas flow and other process control settings, and to the clean gas mass flow controller to shut off the clean gas flow once the threshold concentration of the monitored compound within the chamber is reached, thereby allowing more rapid preparation of the chamber for the next processing cycle.
(FR) La présente invention concerne un processus de surveillance in situ, de régulation de processus et de détermination d'un état de point final d'un nettoyage de chambre pendant le processus de production de semi-conducteurs, qui fixe un laser à cascade quantique accordable (QCL) (20) sur la chambre de traitement (22) ou au niveau d'une conduite de refoulement primaire d'un outil de fabrication de semi-conducteurs pour détecter des concentrations de gaz de processus, de gaz de sous-produits, et d'autres composés gazeux affectant le processus de production, et pour déterminer quand les concentrations de gaz propres ou de sous-produits gazeux chutent en dessous d'un seuil prédéfini. Le système de détection à QLC envoie ensuite un signal électronique automatisé aux systèmes de régulation de production de semi-conducteurs pour changer automatiquement le débit de gaz et d'autres paramètres de régulation de processus, et au dispositif de régulation de débit massique de gaz propre pour arrêter le flux de gaz propre une fois que la concentration de seuil du composé surveillé à l'intérieur de la chambre est atteinte, ce qui permet une préparation plus rapide de la chambre pour le cycle de traitement suivant.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)