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1. (WO2018222920) MULTI-REGION DIFFUSION BARRIER CONTAINING TITANIUM, SILICON AND NITROGEN

Pub. No.:    WO/2018/222920    International Application No.:    PCT/US2018/035470
Publication Date: Fri Dec 07 00:59:59 CET 2018 International Filing Date: Fri Jun 01 01:59:59 CEST 2018
IPC: H01L 21/285
H01L 21/02
H01L 21/768
H01L 21/324
Applicants: EUGENUS, INC.
Inventors: VATS, Vinayek Veer
KARIM, M. Ziaul
CHOI, Bo Seon
RATHI, Somilkumar J.
MUKHERJEE, Niloy
Title: MULTI-REGION DIFFUSION BARRIER CONTAINING TITANIUM, SILICON AND NITROGEN
Abstract:
The disclosed technology generally relates to semiconductor structures and their fabrication, and more particularly to diffusion barrier structures containing Ti, Si, N and methods of forming same. A method of forming an electrically conductive diffusion barrier comprises providing a substrate in a reaction chamber and forming a titanium silicide (TiSi) region on the substrate by alternatingly exposing the substrate to a titanium-containing precursor and a first silicon-containing precursor. The method additionally comprises forming a titanium silicon nitride (TiSiN) region on the TiSi region by alternatingly exposing the substrate to a titanium-containing precursor, a nitrogen-containing precursor and a second silicon-containing precursor. The method can optionally include, prior to forming the TiSi region, forming a titanium nitride (TiN) region by alternatingly exposing the substrate to a titanium-containing precursor and a nitrogen-containing precursor.