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1. (WO2018222680) SELECTIVE DEPOSITION AND ETCHING OF METAL PILLARS USING AACVD AND AN ELECTRICAL BIAS
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Pub. No.: WO/2018/222680 International Application No.: PCT/US2018/035076
Publication Date: 06.12.2018 International Filing Date: 30.05.2018
IPC:
H01L 21/02 (2006.01) ,H01L 21/324 (2006.01) ,H01L 21/285 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324
Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283
Deposition of conductive or insulating materials for electrodes
285
from a gas or vapour, e.g. condensation
Applicants:
APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, California 95054, US
Inventors:
VISSER, Robert Jan; US
GORADIA, Prerna; IN
CHAKRABORTY, Tapash; IN
ARNEPALLI, Ranga Rao; IN
THAKARE, Darshan; IN
BAJAJ, Geetika; IN
Agent:
BLANKMAN, Jeffrey I.; US
Priority Data:
62/512,71730.05.2017US
Title (EN) SELECTIVE DEPOSITION AND ETCHING OF METAL PILLARS USING AACVD AND AN ELECTRICAL BIAS
(FR) DÉPÔT ET GRAVURE SÉLECTIFS DE PILIERS MÉTALLIQUES À L'AIDE D'UN AACVD ET D'UNE POLARISATION ÉLECTRIQUE
Abstract:
(EN) Embodiments of the disclosure relate to methods of selectively depositing or etching conductive materials from a substrate comprising conductive materials and nonconductive materials. More particularly, embodiments of the disclosure are directed to methods of using electrical bias and aerosol assisted chemical vapor deposition to deposit metal on conductive metal pillars. Additional embodiments of the disclosure relate to methods of using electrical bias and aerosol assisted chemical vapor deposition to etch metal from conductive metal pillars.
(FR) Certains modes de réalisation de l'invention concernent des procédés de dépôt ou de gravure sélectifs de matériaux conducteurs d'un substrat comprenant des matériaux conducteurs et des matériaux non conducteurs. Plus particulièrement, certains modes de réalisation de l'invention concernent des procédés d'utilisation d'une polarisation électrique et d'un dépôt chimique en phase vapeur assisté par aérosol destinés à déposer un métal sur des piliers métalliques conducteurs. D'autres modes de réalisation de l'invention concernent des procédés d'utilisation d'une polarisation électrique et d'un dépôt chimique en phase vapeur assisté par aérosol destinés à graver un métal à partir de piliers métalliques conducteurs.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)