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1. (WO2018222614) QUALITY IMPROVEMENT OF FILMS DEPOSITED ON A SUBSTRATE
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Pub. No.: WO/2018/222614 International Application No.: PCT/US2018/034940
Publication Date: 06.12.2018 International Filing Date: 29.05.2018
IPC:
H01L 21/02 (2006.01) ,H01L 21/324 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324
Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Applicants:
APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, California 95054, US
Inventors:
MANNA, Pramit; US
MALLICK, Abhijit Basu; US
LESCHKIES, Kurtis; US
VERHAVERBEKE, Steven; US
KAMATH, Sanjay; US
WANG, Zongbin; SG
ZHANG, Hanwen; SG
JIANG, Shishi; US
Agent:
PATTERSON, B. Todd; US
DOUGHERTY, Chad M.; US
Priority Data:
62/514,54502.06.2017US
Title (EN) QUALITY IMPROVEMENT OF FILMS DEPOSITED ON A SUBSTRATE
(FR) AMÉLIORATION DE LA QUALITÉ DE FILMS DÉPOSÉS SUR UN SUBSTRAT
Abstract:
(EN) Embodiments of the disclosure generally relate to a method of processing a semiconductor substrate at a temperature less than 250 degrees Celsius. In one embodiment, the method includes loading the substrate with the deposited film into a pressure vessel, exposing the substrate to a processing gas comprising an oxidizer at a pressure greater than about 2 bars, and maintaining the pressure vessel at a temperature between a condensation point of the processing gas and about 250 degrees Celsius.
(FR) Des modes de réalisation de l'invention concernent généralement un procédé de traitement d'un substrat semi-conducteur à une température inférieure à 250 degrés Celsius. Dans un mode de réalisation, le procédé consiste à : charger le substrat avec le film déposé dans un récipient sous pression, exposer le substrat à un gaz de traitement comprenant un oxydant à une pression supérieure à environ 2 bars, et maintenir le récipient sous pression à une température entre un point de condensation du gaz de traitement et environ 250 degrés Celsius.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)