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1. (WO2018222443) METHODS FOR WORDLINE SEPARATION IN 3D-NAND DEVICES
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Pub. No.: WO/2018/222443 International Application No.: PCT/US2018/033893
Publication Date: 06.12.2018 International Filing Date: 22.05.2018
IPC:
H01L 27/11556 (2017.01) ,H01L 27/11524 (2017.01) ,H01L 27/11529 (2017.01) ,H01L 27/11582 (2017.01) ,H01L 27/1157 (2017.01) ,H01L 27/11573 (2017.01)
[IPC code unknown for ERROR IPC Code incorrect: invalid subgroup (0=>999999)!][IPC code unknown for ERROR IPC Code incorrect: invalid subgroup (0=>999999)!][IPC code unknown for ERROR IPC Code incorrect: invalid subgroup (0=>999999)!][IPC code unknown for ERROR IPC Code incorrect: invalid subgroup (0=>999999)!][IPC code unknown for H01L 27/1157][IPC code unknown for ERROR IPC Code incorrect: invalid subgroup (0=>999999)!]
Applicants:
APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, California 95054, US
Inventors:
CHEN, Yihong; US
DUAN, Ziqing; US
MALLICK, Abhijit Basu; US
CHAN, Kelvin; US
Agent:
BLANKMAN, Jeffrey I.; US
Priority Data:
62/513,37131.05.2017US
Title (EN) METHODS FOR WORDLINE SEPARATION IN 3D-NAND DEVICES
(FR) PROCÉDÉS DE SÉPARATION DE LIGNES DE MOTS DANS DES DISPOSITIFS NON-ET 3D
Abstract:
(EN) Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.
(FR) L'invention concerne des procédés de séparation de lignes de mots dans des dispositifs semiconducteurs (par exemple des NAND 3D). Un film métallique est déposé dans les lignes de mots et sur la surface d'un empilement de couches d'oxyde espacées. Le film métallique est retiré par oxydation à haute température et gravure de l'oxyde ou gravure de la couche atomique à basse température par oxydation de la surface et gravure de l'oxyde d'une manière monocouche. Après élimination de la surcharge métallique, les lignes de mots sont remplies avec le film métallique.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)