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1. (WO2018222381) POROUS LOW-K DIELECTRIC ETCH

Pub. No.:    WO/2018/222381    International Application No.:    PCT/US2018/032584
Publication Date: Fri Dec 07 00:59:59 CET 2018 International Filing Date: Tue May 15 01:59:59 CEST 2018
IPC: H01L 21/3065
H01L 21/027
H01L 21/311
H01L 21/3213
H01L 21/02
Applicants: LAM RESEARCH CORPORATION
Inventors: HUDSON, Eric
DESHMUKH, Shashank
LI, Sonny
WANG, Chia-Chun
GOPALADASU, Prabhakara
OUYANG, Zihao
Title: POROUS LOW-K DIELECTRIC ETCH
Abstract:
A method for etching features into a porous low-k dielectric etch layer is provided. A plurality of cycles is performed in a plasma processing chamber. Each cycle comprises a deposition phase and an activation phase. The deposition phase comprises flowing a deposition gas comprising a fluorocarbon and/or hydrofluorocarbon gas, creating a plasma in the plasma processing chamber using the deposition gas, depositing a fluorocarbon or hydrofluorocarbon containing layer, and stopping the flow of the deposition gas. The activation phase comprises flowing an activation gas comprising a noble gas and a carbon etching additive, creating a plasma in the plasma processing chamber using the activation gas, providing an activation bias in the plasma processing chamber, wherein the activation bias causes the etching of the low-k dielectric layer, with consumption of the fluorocarbon or hydrofluorocarbon containing layer, and stopping the flow of the activation gas.