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1. (WO2018222237) METHODS AND APPARATUS FOR THREE-DIMENSIONAL NONVOLATILE MEMORY

Pub. No.:    WO/2018/222237    International Application No.:    PCT/US2018/021062
Publication Date: Fri Dec 07 00:59:59 CET 2018 International Filing Date: Wed Mar 07 00:59:59 CET 2018
IPC: H01L 45/00
H01L 27/24
Applicants: SANDISK TECHNOLOGIES LLC
Inventors: WICKLEIN, Sebastian J.M
Title: METHODS AND APPARATUS FOR THREE-DIMENSIONAL NONVOLATILE MEMORY
Abstract:
A method is provided that includes forming a word line above a substrate, forming a bit line above the substrate, forming a nonvolatile memory material between the word line and the bit line, and forming a memory cell including the nonvolatile memory material at an intersection of the bit line and the word line. The word line is disposed in a first direction, and includes a first word line portion and a second word line portion. The second word line portion of the word line includes a first conductive oxide material. The bit line is disposed in a second direction perpendicular to the first direction. The nonvolatile memory material includes a barrier oxide material layer and a second conductive oxide material layer, with the barrier oxide material layer disposed adjacent the second word line portion of the word line.