A method is provided that includes forming a word line above a substrate, forming a bit line above the substrate, forming a nonvolatile memory material between the word line and the bit line, and forming a memory cell including the nonvolatile memory material at an intersection of the bit line and the word line. The word line is disposed in a first direction, and includes a first word line portion and a second word line portion. The second word line portion of the word line includes a first conductive oxide material. The bit line is disposed in a second direction perpendicular to the first direction. The nonvolatile memory material includes a barrier oxide material layer and a second conductive oxide material layer, with the barrier oxide material layer disposed adjacent the second word line portion of the word line.