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1. (WO2018221894) PIEZOELECTRIC SENSOR
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Pub. No.: WO/2018/221894 International Application No.: PCT/KR2018/005954
Publication Date: 06.12.2018 International Filing Date: 25.05.2018
IPC:
H01L 41/113 (2006.01) ,H01L 41/047 (2006.01) ,H01L 41/193 (2006.01) ,H01L 41/083 (2006.01) ,H01L 41/27 (2013.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
Piezo-electric or electrostrictive elements
113
with mechanical input and electrical output
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
04
of piezo-electric or electrostrictive elements
047
Electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16
Selection of materials
18
for piezo-electric or electrostrictive elements
193
Macromolecular compositions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
Piezo-electric or electrostrictive elements
083
having a stacked or multilayer structure
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22
Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
27
Manufacturing multilayered piezo-electric or electrostrictive devices or parts thereof, e.g. by stacking piezo-electric bodies and electrodes
Applicants:
주식회사 중일산업 JOONG ILL INDUSTRIAL CO., LTD. [KR/KR]; 인천시 남동구 앵고개로 381 381, Aenggogae-ro Namdong-gu Incheon 21695, KR
Inventors:
임환영 LIM, Hwangyung; KR
박기륜 PARK, Kiryun; KR
이성호 LEE, Sungho; KR
Agent:
신경호 SHIN, Kyoungho; KR
Priority Data:
10-2017-006619829.05.2017KR
Title (EN) PIEZOELECTRIC SENSOR
(FR) CAPTEUR PIÉZOÉLECTRIQUE
(KO) 압전 센서
Abstract:
(EN) The present invention relates to a piezoelectric sensor using a piezoelectric poly vinylidene fluoride (PVDF) film, and provides, as an embodiment, a piezoelectric sensor comprising: a PVDF film; an electrode layer formed on the upper surface of the PVDF film; a substrate having a first electrode electrically connected to the electrode layer, and a second electrode at a position spaced from the first electrode; a non-conductive layer covering and concealing the electrode layer; a first shielding film attached to the non-conductive layer and electrically connected to the second electrode; and a second shielding film attached to the upper surface of the PVDF film, and encompassing a stack of the PVDF film to the non-conductive layer and connected to the first shielding film.
(FR) La présente invention se rapporte à un capteur piézoélectrique utilisant un film de polyfluorure de vinylidène piézoélectrique (PVDF) et fournit, en tant que mode de réalisation, un capteur piézoélectrique comprenant : un film de PVDF ; une couche d'électrode formée sur la surface supérieure du film de PVDF ; un substrat ayant une première électrode raccordée électriquement à la couche d'électrode, et une seconde électrode à une position espacée de la première électrode ; une couche non conductrice recouvrant et masquant la couche d'électrode ; un premier film de protection fixé à la couche non conductrice et raccordé électriquement à la seconde électrode ; et un second film de protection fixé à la surface supérieure du film de PVDF et englobant un empilement du film de PVDF sur la couche non conductrice et raccordé au premier film de protection.
(KO) 본 발명은 압전성 폴리 비닐 리덴 플루오 라이드 필름(PVDF film)을 이용하는 압전 센서와 관련되며 실시예로, PVDF 필름, 상기 PVDF 필름의 상면에 형성되는 전극층, 상기 전극층과 전기적으로 연결되는 제1 전극과, 상기 제1 전극과 이격된 위치에 제2 전극을 구비하는 기판, 상기 전극층을 덮어 가리는 비전도층, 상기 비전도층에 부착되면서 상기 제2 전극과 전기적으로 연결되는 제1 차폐필름 및 상기 PVDF 필름의 상면에 부착되고, 상기 PVDF필름 내지 상기 비전도층의 적층물을 감싸면서 상기 제1 차폐필름과 연결되는 제2 차폐필름을 포함하는 압전 센서를 제시한다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)