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1. (WO2018221752) THREE-DIMENSIONAL LONG-WAVELENGTH LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREFOR
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Pub. No.: WO/2018/221752 International Application No.: PCT/KR2017/005560
Publication Date: 06.12.2018 International Filing Date: 29.05.2017
IPC:
H01L 33/22 (2010.01) ,H01L 33/32 (2010.01) ,H01L 33/36 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
20
with a particular shape, e.g. curved or truncated substrate
22
Roughened surfaces, e.g. at the interface between epitaxial layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
32
containing nitrogen
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
Applicants:
이석헌 LEE, Suk-Hun [KR/KR]; KR
김광희 KIM, Kwang-Hee [KR/KR]; KR
Inventors:
이석헌 LEE, Suk-Hun; KR
김광희 KIM, Kwang-Hee; KR
Agent:
특허법인 대아 DAE-A INTELLECTUAL PROPERTY CONSULTING; 서울시 강남구 역삼로 123 한양빌딩 3층 3F, Hanyang Bldg., 123 Yeoksam-ro Gangnam-gu Seoul 06243, KR
Priority Data:
Title (EN) THREE-DIMENSIONAL LONG-WAVELENGTH LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREFOR
(FR) DIODE ÉLECTROLUMINESCENTE À ONDES LONGUES TRIDIMENSIONNELLE ET SON PROCÉDÉ DE FABRICATION
(KO) 3차원 장파장 발광다이오드 및 그 제조 방법
Abstract:
(EN) A three-dimensional long-wavelength light-emitting diode and a manufacturing method therefor are disclosed. According to an embodiment of the present invention, the three-dimensional long-wavelength light-emitting diode comprises: a substrate having a surface having a plurality of three-dimensional structures spaced apart from each other; and a first-conductive type semiconductor layer, an active layer, and a second-conductive type semiconductor layer sequentially formed on the substrate. The active layer includes AlGaInP or AlGaAs and emits light having a wavelength of 600 nm or more. Specifically, the active layer maintains a surface shape of the substrate.
(FR) La présente invention porte sur une diode électroluminescente à ondes longues tridimensionnelle et son procédé de fabrication. Selon un mode de réalisation de la présente invention, la diode électroluminescente à ondes longues tridimensionnelle comprend : un substrat ayant une surface ayant une pluralité de structures tridimensionnelles espacées les unes des autres; et une couche semi-conductrice de premier type de conductivité, une couche active et une couche semi-conductrice de second type de conductivité formées séquentiellement sur le substrat. La couche active comprend de l'AlGaInP ou de l'AlGaAs et émet de la lumière ayant une longueur d'onde d'au minimum 600 nm. En particulier, la couche active maintient une forme de surface du substrat.
(KO) 3차원 장파장 발광다이오드 및 그 제조 방법에 대하여 개시한다. 본 발명의 실시예에 따른 3차원 장파장 발광다이오드는 서로 이격된 복수의 3차원 구조물을 구비하는 표면을 구비하는 기판과, 그 위에 순차 형성되는 제1 도전형 반도체층, 활성층 및 제2 도전형 반도체층을 포함한다. 상기 활성층은 AlGaInP 또는 AlGaAs를 포함하여 600nm 이상의 파장을 갖는 광을 방출한다. 특히, 상기 활성층은 상기 기판의 표면 형상을 유지한다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)