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1. (WO2018221504) ALUMINUM NITRIDE-BASED SINTERED COMPACT AND SEMICONDUCTOR HOLDING DEVICE

Pub. No.:    WO/2018/221504    International Application No.:    PCT/JP2018/020519
Publication Date: Fri Dec 07 00:59:59 CET 2018 International Filing Date: Wed May 30 01:59:59 CEST 2018
IPC: C04B 35/581
H01L 21/683
Applicants: KYOCERA CORPORATION
京セラ株式会社
Inventors: WANG,Yucong
王 雨叢
SATOU,Masahiro
佐藤 政宏
KUCHIMACHI,Kazuhiro
口町 和一
Title: ALUMINUM NITRIDE-BASED SINTERED COMPACT AND SEMICONDUCTOR HOLDING DEVICE
Abstract:
An aluminum nitride-based sintered compact 1 includes: crystalline particles 2 of Mg-containing aluminum nitride; a composite oxide which has a Garnet type crystal structure and contains a rare earth element and Al; and a composite oxynitride that contains Mg and Al. Particles 3 of the composite oxide and particles 4 of the composite oxynitride are scattered between the crystalline particles 2 of the Mg-containing aluminum nitride. The composite oxide may contain Y. The crystalline particles 2 of the Mg-containing aluminum nitride may contain 0.1-1.0 mol% of Mg if the content of all contained metal elements is taken to be 100 mol%. A semiconductor holding device is provided with this aluminum nitride-based sintered compact 1 and an electrode 13 for electrostatic adsorption.