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1. (WO2018221379) SUPPORT SUBSTRATE
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Pub. No.: WO/2018/221379 International Application No.: PCT/JP2018/020033
Publication Date: 06.12.2018 International Filing Date: 24.05.2018
IPC:
H01L 21/56 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
56
Encapsulations, e.g. encapsulating layers, coatings
Applicants:
京セラ株式会社 KYOCERA CORPORATION [JP/JP]; 京都府京都市伏見区竹田鳥羽殿町6番地 6, Takeda Tobadono-cho, Fushimi-ku, Kyoto-shi, Kyoto 6128501, JP
Inventors:
東 浩二 HIGASHI,Kouji; JP
Priority Data:
2017-10670230.05.2017JP
Title (EN) SUPPORT SUBSTRATE
(FR) SUBSTRAT DE SUPPORT
(JA) 支持基板
Abstract:
(EN) The support substrate according to the present disclosure is a plate-shaped ceramic body having a first surface and a second surface that is located on the reverse side of the first surface. The arithmetic surface roughness Ra of the first surface, as obtained from a roughness curve, is no greater than 0.5 μm and the skewness Rsk, obtained from the roughness curve, is negative.
(FR) Le substrat de support selon la présente invention consiste en un corps en céramique en forme de plaque ayant une première surface et une seconde surface qui est située sur le côté opposé de la première surface. La rugosité de surface arithmétique Ra de la première surface, telle qu'obtenue à partir d'une courbe de rugosité, est inférieure ou égale à 0,5 µm et la dissymétrie Rsk, obtenue à partir de la courbe de rugosité, est négative.
(JA) 本開示の支持基板は、セラミックスからなり、第1面と、該第1面の反対に位置する第2面とを有する板状体である。そして、第1面は、粗さ曲線から求められる算術平均粗さRaが0.5μm以下であるとともに、粗さ曲線から求められるスキューネスRskが負である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)