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1. (WO2018221327) TFT SUBSTRATE AND SCANNING ANTENNA PROVIDED WITH TFT SUBSTRATE
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Pub. No.: WO/2018/221327 International Application No.: PCT/JP2018/019713
Publication Date: 06.12.2018 International Filing Date: 22.05.2018
IPC:
H01L 29/786 (2006.01) ,G02F 1/13 (2006.01) ,H01Q 3/34 (2006.01) ,H01Q 3/44 (2006.01) ,H01Q 13/22 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
Q
AERIALS
3
Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an aerial or aerial system
26
varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
30
varying the phase
34
by electrical means
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
Q
AERIALS
3
Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an aerial or aerial system
44
varying the electric or magnetic characteristics of reflecting, refracting, or diffracting devices associated with the radiating element
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
Q
AERIALS
13
Waveguide horns or mouths; Slot aerials; Leaky-waveguide aerials; Equivalent structures causing radiation along the transmission path of a guided wave
20
Non-resonant leaky-waveguide or transmission-line aerials; Equivalent structures causing radiation along the transmission path of a guided wave
22
Longitudinal slot in boundary wall of waveguide or transmission line
Applicants:
シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府堺市堺区匠町1番地 1, Takumi-cho, Sakai-ku, Sakai City, Osaka 5908522, JP
Inventors:
美崎 克紀 MISAKI Katsunori; --
Agent:
奥田 誠司 OKUDA Seiji; JP
Priority Data:
2017-10802631.05.2017JP
Title (EN) TFT SUBSTRATE AND SCANNING ANTENNA PROVIDED WITH TFT SUBSTRATE
(FR) SUBSTRAT TFT ET ANTENNE DE BALAYAGE COMPRENANT UN SUBSTRAT TFT
(JA) TFT基板およびTFT基板を備えた走査アンテナ
Abstract:
(EN) This TFT substrate (101A) is provided with: a dielectric substrate (1); and a plurality of antenna unit areas (U) arranged on the dielectric substrate (1). Each of the plurality of antenna unit areas (U) has: a TFT (10); a patch electrode (15) electrically connected to a drain electrode (7D) of the TFT(10); and a patch drain connection part for electrically connecting the drain electrode (7D) and the patch electrode (15), wherein the patch drain connection part includes a conductive portion included in a conductive layer which is closer to the dielectric substrate (1) than a conductive layer (151) including the patch electrode (15), and which is one closer to the dielectric substrate (1), among a conductive layer including a gate electrode (3G) of the TFT (10) and a conductive layer including a source electrode (7S) of the TFT (10).
(FR) L'invention concerne un substrat de transistor à couches minces (101A) comprenant un substrat diélectrique (1) et une pluralité de zones d'unité d'antenne (U) disposées sur le substrat diélectrique (1). Chacune de la pluralité de zones d'unité d'antenne (U) comprend : un TFT (10); une électrode patch (15) connectée électriquement à une électrode de drain (7D) du TFT (10); et une partie de connexion patch drain pour connecter électriquement l'électrode de drain (7D) et l'électrode patch (15), la partie de connexion patch drain comprenant une partie conductrice incluse dans une couche conductrice qui est plus proche du substrat diélectrique (1) qu'une couche conductrice (151) comprenant l'électrode patch (15), et qui est plus proche du substrat diélectrique (1), parmi une couche conductrice comprenant une électrode de grille (3G) du TFT (10) et une couche conductrice comprenant une électrode de source (7S) du TFT (10).
(JA) TFT基板(101A)は、誘電体基板(1)と、誘電体基板(1)上に配列された複数のアンテナ単位領域(U)とを有する。複数のアンテナ単位領域(U)のそれぞれは、TFT(10)と、TFTのドレイン電極(7D)に電気的に接続されたパッチ電極(15)と、ドレイン電極(7D)とパッチ電極(15)とを電気的に接続するパッチドレイン接続部とを有し、パッチドレイン接続部は、パッチ電極(15)を含む導電層(15l)よりも誘電体基板(1)に近い導電層であって、TFT(10)のゲート電極(3G)を含む導電層またはTFT(10)のソース電極(7S)を含む導電層のいずれか誘電体基板(1)に近い方の導電層に含まれている導電部を含む。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)