Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2018221201) MASK BLANK, METHOD FOR MANUFACTURING TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/221201 International Application No.: PCT/JP2018/018707
Publication Date: 06.12.2018 International Filing Date: 15.05.2018
IPC:
G03F 1/54 (2012.01) ,G03F 1/50 (2012.01) ,G03F 7/20 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
54
Absorbers, e.g. opaque materials
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
50
Mask blanks not covered by groups G03F1/20-G03F1/2686; Preparation thereof
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
Applicants:
HOYA株式会社 HOYA CORPORATION [JP/JP]; 東京都新宿区西新宿六丁目10番1号 6-10-1 Nishi-Shinjuku, Shinjuku-ku, Tokyo 1608347, JP
ホーヤ エレクトロニクス シンガポール プライベート リミテッド HOYA ELECTRONICS SINGAPORE PTE. LTD. [SG/SG]; クレセント インダストリアル タンピネス10 10 Tampines Industrial Crescent 528603, SG
Inventors:
橋本 雅広 HASHIMOTO, Masahiro; JP
内田 真理子 UCHIDA, Mariko; SG
Agent:
永田 豊 NAGATA, Yutaka; JP
大島 孝文 OSHIMA, Takafumi; JP
太田 司 OTA, Tsukasa; JP
Priority Data:
2017-10776731.05.2017JP
Title (EN) MASK BLANK, METHOD FOR MANUFACTURING TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
(FR) ÉBAUCHE DE MASQUE, PROCÉDÉ DE FABRICATION D’UN MASQUE DE TRANSFERT ET PROCÉDÉ DE FABRICATION D’UN DISPOSITIF À SEMI-CONDUCTEUR
(JA) マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法
Abstract:
(EN) Provided are a mask blank, a method for manufacturing a transfer mask, and a method for manufacturing a semiconductor device, with which it is possible to minimize the incidence of surface roughness in a translucent substrate when EB defect correction is performed, and with which it is possible to minimize the incidence of spontaneous etching in the pattern of a light-blocking film. The present invention comprises a light-blocking film for forming a transfer pattern on a translucent substrate, the light-blocking film being formed from a material comprising silicon and nitrogen, or a material that further includes at least one element selected from among metalloid elements and non-metallic elements. The ratio obtained by dividing the number of Si3N4 bonds present in the internal region of the light-blocking film, excluding the region near the interface of the light-blocking film with the translucent substrate and the surface-layer region of the light-blocking film on the opposite side to the translucent substrate, by the total number of Si3N4 bonds, SiaNb bonds (b/[a+b] < 4/7), and Si–Si bonds, is 0.04 or less, and the ratio obtained by dividing the number of SiaNb bonds present in the internal region of the light-blocking film by the total number of Si3N4 bonds, SiaNb bonds, and Si–Si bonds is 0.1 or greater.
(FR) L'invention concerne une ébauche de masque, un procédé de fabrication d'un masque de transfert, et un procédé de fabrication d'un dispositif à semi-conducteur, au moyen desquels il est possible de réduire au minimum l'incidence de rugosité de surface dans un substrat translucide lorsqu'une correction de défaut d'EB est effectuée, et au moyen desquels il est possible de réduire au minimum l'incidence de gravure spontanée dans le motif d'un film de blocage de lumière. La présente invention comprend un film de blocage de lumière servant à former un motif de transfert sur un substrat translucide, le film de blocage de lumière étant formé à partir d'un matériau comprenant du silicium et de l'azote, ou un matériau qui comprend en outre au moins un élément choisi parmi des éléments métalloïdes et des éléments non métalliques. Le rapport obtenu par division du nombre de liaisons Si3N4 présentes dans la région interne du film de blocage de lumière, à l'exclusion de la région à proximité de l'interface du film de blocage de lumière ayant le substrat translucide et de la région de couche de surface du film de blocage de lumière sur le côté opposé au substrat translucide, par le nombre total de liaisons Si3N4, liaisons SiaNb (b/[a+b] < 4/7), et des liaisons Si-Si, est inférieure ou égale à 0,04, et le rapport obtenu par division du nombre de liaisons SiaNb présentes dans la région interne du film de blocage de lumière par le nombre total de liaisons Si3N4, de liaisons SiaNb, et de liaisons Si-Si est de 0,1 ou plus.
(JA) EB欠陥修正を行った場合に透光性基板の表面荒れの発生を抑制でき、遮光膜のパターンに自発性エッチングが発生することを抑制できる、マスクブランク、転写用マスクの製造方法、半導体デバイスの製造方法を提供する。 透光性基板上に転写パターンを形成するための遮光膜を備え、遮光膜は、ケイ素と窒素とからなる材料、または半金属元素および非金属元素から選ばれる1以上の元素をさらに含む材料で形成され、遮光膜の透光性基板との界面の近傍領域と遮光膜の透光性基板とは反対側の表層領域を除いた内部領域におけるSi結合の存在数を、Si結合、Si結合(ただし、b/[a+b]<4/7)およびSi-Si結合の合計存在数で除した比率が0.04以下であり、遮光膜の内部領域におけるSi結合の存在数を、Si結合、Si結合およびSi-Si結合の合計存在数で除した比率が0.1以上である。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)