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1. (WO2018221166) SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
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Pub. No.: WO/2018/221166 International Application No.: PCT/JP2018/018358
Publication Date: 06.12.2018 International Filing Date: 11.05.2018
IPC:
H01L 21/304 (2006.01) ,H01L 21/027 (2006.01) ,H01L 21/683 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
Applicants:
株式会社SCREENホールディングス SCREEN HOLDINGS CO., LTD. [JP/JP]; 京都府京都市上京区堀川通寺之内上る4丁目天神北町1番地の1 Tenjinkita-machi 1-1, Teranouchi-agaru 4-chome, Horikawa-dori, Kamigyo-ku, Kyoto-shi, Kyoto 6028585, JP
Inventors:
古川 正晃 FURUKAWA Masaaki; JP
津田 祥太郎 TSUDA Shotaro; JP
西田 崇之 NISHIDA Takayuki; JP
Agent:
杉谷 勉 SUGITANI Tsutomu; JP
Priority Data:
2017-10563029.05.2017JP
Title (EN) SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
(FR) DISPOSITIF DE TRAITEMENT DE SUBSTRAT ET PROCÉDÉ DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置および基板処理方法
Abstract:
(EN) A second gas discharge part 81 is provided closer to an axis line P1 than six support pins 13 installed around the axis line P1, and on the outer peripheral side of a substrate W, when the substrate W, which is held with a spin chuck 2, is viewed in plan view. The second gas discharge part 81, in addition to the discharge of gas by a first gas discharge part 65, discharges gas in the vicinity of the contact portion between the end of the substrate W and each of the six support pins 13. Namely, the second gas discharge part 81 discharges gas from near the support pins 13 to the vicinity of the contact portion between the end of the substrate W and the support pins 13, where the effect of suppression of entry is reduced and processing fluid might be expected to enter to the bottom surface of the substrate W. The flow of the gas from the first gas discharge part 65 is thereby intensified to a pinpoint, whereby the effect for suppressing entry of the processing fluid to the bottom surface of the substrate W can be improved.
(FR) Selon la présente invention, une seconde partie de décharge de gaz (81) est disposée plus près d'une ligne d'axe P1 que six broches de support (13) installées autour de la ligne d'axe P1, et sur le côté périphérique externe d'un substrat (W), lorsque le substrat (W), qui est maintenu avec un mandrin rotatif (2), est visualisé dans une vue en plan. La seconde partie de décharge de gaz (81), en plus de la décharge de gaz par une première partie de décharge de gaz (65), évacue le gaz à proximité de la partie de contact entre l'extrémité du substrat (W) et chacune des six broches de support (13). Plus précisément, la seconde partie de décharge de gaz (81) évacue le gaz depuis les broches de support (13) à proximité de la partie de contact entre l'extrémité du substrat (W) et les broches de support (13), l'effet de suppression de l'entrée étant réduit et le fluide de traitement pouvant être susceptible d'entrer dans la surface inférieure du substrat (W). Le flux du gaz depuis la première partie de décharge de gaz (65) est ainsi intensifié jusqu'à un point identifié, moyennant quoi l'effet de suppression de l'entrée du fluide de traitement vers la surface inférieure du substrat (W) peut être amélioré.
(JA) 第2気体吐出部81は、スピンチャック2で保持された基板Wを平面視した際に、軸線P1周りに立設された6本の支持ピン13よりも軸線P1側でかつ、基板Wの外周側に設けられている。第2気体吐出部81は、第1気体吐出部65による気体の吐出に加えて、6本の支持ピン13の各々と基板Wの端との接触部分付近に気体を吐出する。すなわち、第2気体吐出部81は、回り込み抑制効果が低下し、基板Wの下面に処理液が回り込むと考えられる支持ピン13と基板Wの端との接触部分付近に、支持ピン13の近くから気体を吐出する。そのため、第1気体吐出部65による気体の流れをピンポイントに強化することで、基板Wの下面への処理液の回り込み抑制効果を改善できる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)