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1. (WO2018221055) NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR LAMINATE, PRODUCTION METHOD FOR SEMICONDUCTOR LAMINATE, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/221055    International Application No.:    PCT/JP2018/016128
Publication Date: Fri Dec 07 00:59:59 CET 2018 International Filing Date: Fri Apr 20 01:59:59 CEST 2018
IPC: C30B 29/38
C23C 16/34
C30B 25/02
H01L 21/20
H01L 21/205
H01L 21/265
H01L 33/32
Applicants: SCIOCS COMPANY LIMITED
株式会社サイオクス
SUMITOMO CHEMICAL COMPANY, LIMITED
住友化学株式会社
Inventors: HORIKIRI Fumimasa
堀切 文正
YOSHIDA Takehiro
吉田 丈洋
Title: NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR LAMINATE, PRODUCTION METHOD FOR SEMICONDUCTOR LAMINATE, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
Abstract:
A nitride crystal substrate comprising a group III nitride crystal and including an n-type impurity is approximated by having an absorption coefficient α, in a wavelength range of at least 1–3.3 µm, that fulfills formula (1) (α=nKλa, 1.5×10–19≤K≤6.0×10–19, a=3), when: wavelength is λ (µ m); the absorption coefficient of the nitride crystal substrate at 27°C is α (cm–1); the free electron density in the nitride crystal substrate is n (cm–3); and K and a are both constants.