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1. (WO2018220973) ETCHING METHOD
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Pub. No.: WO/2018/220973 International Application No.: PCT/JP2018/012689
Publication Date: 06.12.2018 International Filing Date: 28.03.2018
IPC:
H01L 21/3065 (2006.01) ,H01L 21/302 (2006.01) ,H01L 21/683 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
Applicants:
東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP/JP]; 東京都港区赤坂五丁目3番1号 3-1 Akasaka 5-chome, Minato-ku, Tokyo 1076325, JP
Inventors:
笹原 麗紅 SASAHARA Reiko; JP
戸田 聡 TODA Satoshi; JP
阿部 拓也 ABE Takuya; JP
黄 祖虹 HUANG Tsuhung; TW
小澤 淑恵 OZAWA Yoshie; JP
中込 健 NAKAGOMI Ken; JP
中畑 賢一 NAKAHATA Kenichi; JP
旭 健史郎 ASAHI Kenshirou; JP
Agent:
高山 宏志 TAKAYAMA Hiroshi; JP
Priority Data:
2017-10674330.05.2017JP
2017-16217925.08.2017JP
Title (EN) ETCHING METHOD
(FR) PROCÉDÉ DE GRAVURE
(JA) エッチング方法
Abstract:
(EN) Provided is an etching method having: a step for disposing a substrate to be processed in a chamber, the substrate having a silicon nitride film, a silicon oxide film, silicon, and silicon germanium; a step for bringing the pressure inside the chamber to 1,333 Pa or more; and a step for supplying hydrogen fluoride gas into the chamber and selectively etching the silicon nitride film with respect to the silicon oxide film, the silicon, and the silicon germanium.
(FR) L'invention concerne un procédé de gravure comportant : une étape consistant à disposer un substrat à traiter dans une chambre, le substrat comportant un film de nitrure de silicium, un film d'oxyde de silicium, du silicium et du silicium-germanium ; une étape consistant à amener la pression à l'intérieur de la chambre à une valeur supérieure ou égale à 1 333 Pa ; et une étape consistant à alimenter la chambre en fluorure d'hydrogène gazeux et à graver sélectivement le film de nitrure de silicium par rapport au film d'oxyde de silicium, au silicium et au silicium-germanium.
(JA) エッチング方法は、窒化シリコン膜、酸化シリコン膜、シリコンおよびシリコンゲルマニウムを有する被処理基板をチャンバー内に配置する工程と、チャンバー内の圧力を1333Pa以上にする工程と、チャンバー内にフッ化水素ガスを供給し、窒化シリコン膜を、酸化シリコン膜、シリコンおよびシリコンゲルマニウムに対して選択的にエッチングする工程とを有する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)