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1. (WO2018220920) SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE
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Pub. No.: WO/2018/220920 International Application No.: PCT/JP2018/007326
Publication Date: 06.12.2018 International Filing Date: 27.02.2018
IPC:
H01L 27/146 (2006.01) ,H01L 21/266 (2006.01) ,H04N 5/365 (2011.01) ,H04N 5/374 (2011.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
265
producing ion implantation
266
using masks
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
357
Noise processing, e.g. detecting, correcting, reducing or removing noise
365
applied to fixed-pattern noise, e.g. non-uniformity of response
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
374
Addressed sensors, e.g. MOS or CMOS sensors
Applicants:
シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府堺市堺区匠町1番地 1, Takumi-cho, Sakai-ku, Sakai City, Osaka 5908522, JP
Inventors:
小西 武文 KONISHI, Takefumi; --
Agent:
特許業務法人HARAKENZO WORLD PATENT & TRADEMARK HARAKENZO WORLD PATENT & TRADEMARK; 大阪府大阪市北区天神橋2丁目北2番6号 大和南森町ビル Daiwa Minamimorimachi Building, 2-6, Tenjinbashi 2-chome Kita, Kita-ku, Osaka-shi, Osaka 5300041, JP
Priority Data:
2017-11046702.06.2017JP
Title (EN) SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE
(FR) DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEURS ET PROCÉDÉ DE FABRICATION DE DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEURS
(JA) 固体撮像装置、および、固体撮像装置の製造方法
Abstract:
(EN) The present invention provides a technology which is capable of suppressing noise charges. According to the present invention, each unit pixel (10) is provided with: a photodiode unit (130); a first charge transfer unit (103A); a charge holding unit (131); a second charge transfer unit (103B); and a charge discharging unit (180). Semiconductor substrate surfaces of the photodiode unit (130), the first charge transfer unit (103A), the charge holding unit (131), the second charge transfer unit (103B), and the charge discharging unit (180) are all covered with a second conductivity-type semiconductor region.
(FR) La présente invention concerne une technologie qui permet de supprimer des charges de bruit. Selon la présente invention, chaque pixel unitaire (10) comprend : une unité photodiode (130) ; une première unité de transfert de charge (103A) ; une unité de maintien de charge (131) ; une seconde unité de transfert de charge (103B) ; et une unité de décharge de charge (180). Des surfaces de substrat semi-conducteur de l'unité photodiode (130), de la première unité de transfert de charge (103A), de l'unité de maintien de charge (131), de la seconde unité de transfert de charge (103B) et de l'unité de décharge de charge (180) sont toutes recouvertes d'une région semi-conductrice d'un second type de conductivité.
(JA) ノイズ電荷を抑制することができる技術を提供する。単位画素(10)の各々が、フォトダイオード部(130)と、第1の電荷転送部(103A)と、電荷保持部(131)と、第2の電荷転送部(103B)と、電荷排出部(180)を備え、フォトダイオード部(130)、第1の電荷転送部(103A)、電荷保持部(131)、第2の電荷転送部(103B)、および、電荷排出部(180)の半導体基板表面が全て第2導電型半導体領域で覆われている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)