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1. (WO2018220819) SEMICONDUCTOR ELEMENT BONDING BOARD, SEMICONDUCTOR DEVICE, AND POWER CONVERSION DEVICE

Pub. No.:    WO/2018/220819    International Application No.:    PCT/JP2017/020607
Publication Date: Fri Dec 07 00:59:59 CET 2018 International Filing Date: Sat Jun 03 01:59:59 CEST 2017
IPC: H01L 21/52
H01L 23/12
H01L 23/13
Applicants: MITSUBISHI ELECTRIC CORPORATION
三菱電機株式会社
Inventors: ISHIKAWA Satoru
石川 悟
Title: SEMICONDUCTOR ELEMENT BONDING BOARD, SEMICONDUCTOR DEVICE, AND POWER CONVERSION DEVICE
Abstract:
The purpose of the present invention is to provide a semiconductor element bonding board, a semiconductor device, and a power conversion device that suppress occurrence of shrinkage cavities when a semiconductor element is bonded to a board by solder and that improve the heat dissipation of the semiconductor element. A semiconductor element bonding board (100) according to the present invention is provided with an insulation plate (1) and a metal pattern (2) that is bonded to a main surface of the insulation plate (1). A main surface (6) on the side opposite to the insulation plate (1) of the metal pattern (2) is provided with a bonding area (6a) in which a semiconductor element (4) is bonded by solder (5). The metal pattern (2) is provided with at least one recess (7) located in the main surface (6). In the bonding area (6a), the at least one recess (7) is located closer to the periphery of the bonding area (6a) than to the center part of the bonding area (6a).