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|1. (WO2018220741) SEMICONDUCTOR DEVICE PRODUCTION METHOD|
|Applicants:||MITSUBISHI ELECTRIC CORPORATION
|Title:||SEMICONDUCTOR DEVICE PRODUCTION METHOD|
Provided is a technique for obtaining sufficiently large drain current in a field effect type transistor using a nitride semiconductor. The invention involves: forming on the upper surface of a semiconductor substrate 1, a channel layer 3, which is Alx1Iny1Ga1-x1-y1N; forming on the upper surface of the channel layer 3, a barrier layer 4, which is Alx2Iny2Ga1-x2-y2N, having a larger band gap than the band gap of the channel layer 3; forming on at least a portion of the upper surface of the barrier layer 4, a gate insulation film 9, which is an insulator or a semiconductor, having a larger band gap than that of the barrier layer 4; forming on the upper surface of the gate insulation film 9, a gate electrode 10; and performing heat processing while applying a positive voltage to the gate electrode 10.