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1. (WO2018220356) FORMING AND OPERATING MEMORY DEVICES THAT UTILIZE CORRELATED ELECTRON MATERIAL (CEM)
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Pub. No.: WO/2018/220356 International Application No.: PCT/GB2018/051457
Publication Date: 06.12.2018 International Filing Date: 30.05.2018
IPC:
G11C 13/00 (2006.01) ,H01L 45/00 (2006.01) ,H01L 27/24 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
13
Digital stores characterised by the use of storage elements not covered by groups G11C11/, G11C23/, or G11C25/173
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24
including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
Applicants:
ARM LIMITED [GB/GB]; 110 Fulbourn Road Cambridge CB1 9NJ, GB
Inventors:
ROSENDALE, Glen Arnold; GB
SHIFREN, Lucian; GB
Agent:
TLIP LTD; Leeds Innovation Centre 103 Clarendon Road Leeds Yorkshire LS2 9DF, GB
Priority Data:
15/610,28831.05.2017US
Title (EN) FORMING AND OPERATING MEMORY DEVICES THAT UTILIZE CORRELATED ELECTRON MATERIAL (CEM)
(FR) FORMATION ET EXPLOITATION DE DISPOSITIFS DE MÉMOIRE UTILISANT UN MATÉRIAU ÉLECTRONIQUE CORRÉLÉ (CEM)
Abstract:
(EN) The present techniques generally relate to fabrication of correlated electron materials (CEMs) devices used, for example, to read from a resistive memory element or to write to a resistive memory element. In embodiments, by limiting current flow through a CEM device, the CEM device may operate in the absence of Mott and/or Mott-like transitions in a way that brings about symmetrical diode-like operation of the CEM device.
(FR) L'invention concerne de manière générale des techniques de fabrication de dispositifs à matériaux électroniques corrélés (CEM) utilisés, par exemple, pour lire à partir d'un élément de mémoire résistif ou pour écrire sur un élément de mémoire résistif. Dans des modes de réalisation, en limitant la circulation du courant à travers un dispositif CEM, le dispositif CEM peut fonctionner en l'absence de transitions Mott et/ou de type Mott d'une manière qui conduit à un fonctionnement de type à diode symétrique du dispositif CEM.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)