Search International and National Patent Collections

1. (WO2018219915) RADIATION-DETECTING SEMICONDUCTOR ELEMENT

Pub. No.:    WO/2018/219915    International Application No.:    PCT/EP2018/064015
Publication Date: Fri Dec 07 00:59:59 CET 2018 International Filing Date: Wed May 30 01:59:59 CEST 2018
IPC: H01L 27/146
Applicants: FRIEDRICH-SCHILLER-UNIVERSITÄT JENA
UNIVERSITÄT STUTTGART
Inventors: STEGLICH, Martin
SCHMELZ, David
OEHME, Michael
SCHULZE, Jörg
Title: RADIATION-DETECTING SEMICONDUCTOR ELEMENT
Abstract:
The invention relates to a radiation-detecting semiconductor element (10) comprising: a silicon substrate (1) having a surface structure (3), the surface structure (3) facing a radiation incident face (5) of the semiconductor component (10) and extending into the silicon substrate (1) at least to a depth of 100 nm; and a lateral arrangement of detector pixels (2) on a front side (6) of the silicon substrate (1), located opposite the radiation incident face (5), the detector pixels (2) respectively comprising a radiation-absorbent layer (8) and being suitable for absorbing radiation having a wavelength of more than 1100 nm.