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1. (WO2018219753) TRIPHENYLGERMYLSILANE AND TRICHLOROSILYL-TRICHLOROGERMANE FOR THE PRODUCTION OF GERMANIUM-SILICON LAYERS, AND METHOD FOR THE PRODUCTION THEREOF FROM TRICHLORSILYL-TRIPHENYLGERMANE
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Pub. No.: WO/2018/219753 International Application No.: PCT/EP2018/063563
Publication Date: 06.12.2018 International Filing Date: 23.05.2018
IPC:
C01B 33/04 (2006.01) ,C01B 33/06 (2006.01) ,C01B 33/107 (2006.01) ,H01L 21/205 (2006.01)
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
B
NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
33
Silicon; Compounds thereof
04
Hydrides of silicon
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
B
NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
33
Silicon; Compounds thereof
06
Metal silicides
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
B
NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
33
Silicon; Compounds thereof
08
Compounds containing halogen
107
Halogenated silanes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants:
EVONIK DEGUSSA GMBH [DE/DE]; Rellinghauser Straße 1-11 45128 Essen, DE
Inventors:
TEICHMANN, Julian; DE
WAGNER, Matthias; DE
LERNER, Hans-Wolfram; DE
Priority Data:
17173951.901.06.2017EP
Title (EN) TRIPHENYLGERMYLSILANE AND TRICHLOROSILYL-TRICHLOROGERMANE FOR THE PRODUCTION OF GERMANIUM-SILICON LAYERS, AND METHOD FOR THE PRODUCTION THEREOF FROM TRICHLORSILYL-TRIPHENYLGERMANE
(FR) TRIPHÉNYLGERMYLSILANE ET TRICHLOROSILYL-TRICHLOROGERMANE POUR LA PRODUCTION DE COUCHES DE GERMANIUM-SILICIUM, ET PROCÉDÉ DE PRODUCTION DE CES DERNIÈRES À PARTIR DE TRICHLOROSILYL-TRIPHÉNYLGERMANE
(DE) TRIPHENYLGERMYLSILAN UND TRICHLORSILYL-TRICHLORGERMAN FÜR DIE ERZEUGUNG VON GERMANIUM-SILIZIUM-SCHICHTEN SOWIE VERFAHREN ZU DEREN HERSTELLUNG AUS TRICHLORSILYL-TRIPHENYLGERMAN
Abstract:
(EN) The invention relates to triphenylgermylsilane (Ph 3Ge-SiH 3) for the production of germanium-silicon layers (Ge-Si) or as a transfer agent of silane groups (SiH 3). The invention further relates to a method for the production of triphenylgermylsilane (Ph 3Ge-SiH 3) by reducing trichlorosilyl-triphenylgermane (Ph 3Ge-SiCl 3) with a hydride in solution, to a method for the production of trichlorosilyltrichlorogermane (Cl 3Ge- SiCl 3) by reacting trichlorosilyltriphenylgermane (Ph 3Ge- SiCl 3) with hydrogen chloride (HCl) in the presence of AlCl 3 in solution, and to the use of trichlorosilyltrichlorogermane for the production of germanium-silicon layers (Ge-Si).
(FR) L'invention concerne un triphénylgermylsilane (Ph 3Ge-SiH 3) pour la production de couches de germanium-silicium (Ge-Si) ou comme véhicule de groupes silane (SiH 3). L'invention porte sur un procédé de préparation de triphénylgermylsilane (Ph 3Ge-SiH 3) par réduction de trichlorosilyl-triphénylgermane (Ph 3Ge-SiCl 3) avec un hydrure en solution. L'invention porte également sur un procédé de production de trichlorosilyltrichlorogermane (Cl 3Ge- SiCI 3) par réaction de trichlorosilyltriphénylgermane (Ph 3Ge- SiCl 3) avec de l'acide chlorhydrique (HCl) en présence d'AlCl 3 en solution. L'invention porte également sur l'utilisation de trichlorosilyltrichlorogermane pour la production de couches de germanium-silicium (Ge-Si).
(DE) Triphenylgermylsilan (Ph 3Ge-SiH 3) für die Erzeugung von Germanium-Silizium-Schichten (Ge-Si) oder als Überträger von Silan-Gruppen (SiH 3). Verfahren zur Herstellung von Triphenylgermylsilan (Ph 3Ge-SiH 3) durch Reduktion von Trichlorsilyl-Triphenylgerman (Ph 3Ge-SiCI 3) mit einem Hydrid in Lösung. Verfahren zur Herstellung von Trichlorsilyltrichlorgerman (Cl 3Ge- SiCI 3) durch Umsetzung von Trichlorsilyltriphenylgerman (Ph 3Ge- SiCI 3) mit Chlorwasserstoff (HCl) in Anwesenheit von AICI 3 in Lösung. Verwendung von Trichlorsilyltrichlorgerman für die Erzeugung von Germanium-Silizium-Schichten (Ge-Si).
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)