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1. (WO2018219484) SUPERCONDUCTING METAL THROUGH-SILICON-VIAS

Pub. No.:    WO/2018/219484    International Application No.:    PCT/EP2017/081792
Publication Date: Fri Dec 07 00:59:59 CET 2018 International Filing Date: Fri Dec 08 00:59:59 CET 2017
IPC: H01L 21/768
H01L 23/48
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION
IBM UNITED KINGDOM LIMITED
Inventors: ABRAHAM, David
COTTE, John, Michael
Title: SUPERCONDUCTING METAL THROUGH-SILICON-VIAS
Abstract:
A semiconductor structure and methods of forming the semiconductor structure generally includes providing a thermocompression bonded superconducting metal layer sandwiched between a first silicon substrate and a second silicon substrate. The second substrate includes a plurality of through silicon vias to the thermocompression bonded superconducting metal layer. A second superconducting metal is electroplated into the through silicon vias using the thermocompression bonded superconducting metal layer as a bottom electrode during the electroplating process, wherein the filling is from the bottom upwards.