Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2018219084) THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR, AND ARRAY SUBSTRATE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/219084 International Application No.: PCT/CN2018/084847
Publication Date: 06.12.2018 International Filing Date: 27.04.2018
IPC:
H01L 27/12 (2006.01) ,H01L 29/786 (2006.01) ,H01L 21/77 (2017.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12
the substrate being other than a semiconductor body, e.g. an insulating body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
Applicants:
京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN/CN]; 中国北京市 朝阳区酒仙桥路10号 No.10 Jiuxianqiao Rd., Chaoyang District Beijing 100015, CN
福州京东方光电科技有限公司 FUZHOU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN/CN]; 中国福建省福州市 福清市石竹街道西环北路36号 No.36 Xihuanbei Rd., Dianthus Street, Fuqing Fuzhou, Fujian 350300, CN
Inventors:
刘晓伟 LIU, Xiaowei; CN
刘勃 LIU, Bo; CN
黄中浩 HUANG, Zhonghao; CN
樊超 FAN, Chao; CN
王洋 WANG, Yang; CN
安亚斌 AN, Yabin; CN
刘正 LIU, Zheng; CN
Agent:
北京市柳沈律师事务所 LIU, SHEN & ASSOCIATES; 中国北京市 海淀区彩和坊路10号1号楼10层 10th Floor, Building 1, 10 Caihefang Road, Haidian District Beijing 100080, CN
Priority Data:
201710392164.727.05.2017CN
Title (EN) THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR, AND ARRAY SUBSTRATE
(FR) TRANSISTOR À COUCHES MINCES, SON PROCÉDÉ DE FABRICATION, ET SUBSTRAT DE RÉSEAU
(ZH) 薄膜晶体管及其制作方法、阵列基板
Abstract:
(EN) Provided are a thin film transistor, a manufacturing method therefor, and an array substrate. The thin film transistor is formed on a base substrate (1), and the thin film transistor comprises: an active layer (4); a first signal metal layer (10), which is disposed on a surface of the active layer (4) that faces the base substrate (1); and a second signal metal layer (11), which is disposed on a surface of the active layer (4) that faces away from the first signal metal layer (10). The active layer (4) comprises a conductive channel formation region (42), and the second signal metal layer (11) does not cover the conductive channel formation region (42) of the active layer (4).
(FR) L'invention concerne un transistor à couches minces, un procédé de fabrication de celui-ci et un substrat de réseau. Le transistor à couches minces est formé sur un substrat de base (1), et le transistor à couches minces comprend : une couche active (4); une première couche métallique de signal (10), qui est disposée sur une surface de la couche active (4) qui fait face au substrat de base (1); et une seconde couche métallique de signal (11), qui est disposée sur une surface de la couche active (4) qui est opposée à la première couche métallique de signal (10). La couche active (4) comprend une région de formation de canal conducteur (42), et la seconde couche métallique de signal (11) ne recouvre pas la région de formation de canal conducteur (42) de la couche active (4).
(ZH) 提供一种薄膜晶体管及其制作方法、阵列基板。该薄膜晶体管形成在衬底基板(1),该薄膜晶体管包括:有源层(4);第一信号金属层(10),设置在有源层(4)面向衬底基板(1)的表面;第二信号金属层(11),设置在有源层(4)背离第一信号金属层(10)的表面,其中有源层(4)包括导电沟道形成区(42),第二信号金属层(11)不覆盖有源层(4)的导电沟道形成区(42)。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)