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1. (WO2018218770) ORGANIC LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
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Pub. No.: WO/2018/218770 International Application No.: PCT/CN2017/094552
Publication Date: 06.12.2018 International Filing Date: 26.07.2017
IPC:
H01L 33/00 (2010.01) ,H01L 51/50 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
Applicants:
深圳市华星光电技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN/CN]; 中国广东省深圳市 光明新区塘明大道9-2号 No.9-2, Tangming Rd, Guangming New District Shenzhen, Guangdong 518132, CN
Inventors:
周凯锋 ZHOU, Kaifeng; CN
Agent:
广州三环专利商标代理有限公司 SCIHEAD IP LAW FIRM; 中国广东省广州市 越秀区先烈中路80号汇华商贸大厦1508室 Room 1508, Huihua Commercial & Trade Building No. 80, XianLie Zhong Road, Yuexiu District Guangzhou, Guangdong 510070, CN
Priority Data:
201710404967.X01.06.2017CN
Title (EN) ORGANIC LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
(FR) DIODE ÉLECTROLUMINESCENTE ORGANIQUE ET SON PROCÉDÉ DE FABRICATION
(ZH) 有机发光二极管及制造方法
Abstract:
(EN) Provided is an organic light emitting diode, comprising a substrate (10), an anode (11), a P-type organic semiconductor layer (12), an N-type organic semiconductor layer (13) and a cathode (14), which are sequentially laminated on a surface of the substrate. The interface between the P-type organic semiconductor layer and the N-type organic semiconductor layer is a curved surface structure.
(FR) L'invention concerne une diode électroluminescente organique, comprenant un substrat (10), une anode (11), une couche semi-conductrice organique de type P (12), une couche semi-conductrice organique de type N (13) et une cathode (14), qui sont séquentiellement stratifiées sur une surface du substrat. L'interface entre la couche semi-conductrice organique de type P et la couche semi-conductrice organique de type N est une structure de surface incurvée.
(ZH) 一种有机发光二极管,包括衬底(10),依次层叠于衬底表面的阳极(11)、P型有机半导体层(12)、N型有机半导体层(13)及阴极(14),P型有机半导体层与N型有机半导体层连接的交界面为曲面结构。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)