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1. (WO2018218712) LOW-TEMPERATURE POLYSILICON TFT SUBSTRATE AND MANUFACTURING METHOD THEREFOR

Pub. No.:    WO/2018/218712    International Application No.:    PCT/CN2017/089620
Publication Date: Fri Dec 07 00:59:59 CET 2018 International Filing Date: Fri Jun 23 01:59:59 CEST 2017
IPC: H01L 21/77
H01L 27/12
Applicants: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD
武汉华星光电技术有限公司
Inventors: WANG, Tao
王涛
Title: LOW-TEMPERATURE POLYSILICON TFT SUBSTRATE AND MANUFACTURING METHOD THEREFOR
Abstract:
A low-temperature polysilicon thin film transistor (TFT) substrate and a manufacturing method therefor. The method comprises: on a substrate (100), sequentially forming a light-shielding portion (111), a buffer layer (12) and an island polysilicon portion (131); performing light ion doping on two sides of the island polysilicon portion (131) to form doped regions (1311) and a channel region (1312); sequentially forming a gate insulating layer (15) and a gate (16); performing heavy ion doping on the doped regions which are not covered by the gate (16) to form N-type heavy-doped regions (1311A) and an N-type light-doped region (1311B); forming an interlayer insulating layer (17) on the gate (161), as well as a source and drain (181, 182) which are electrically connected to the N-type heavy-doped regions.