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1. (WO2018218368) METHODS FOR SYNTHESIZING METAL NANOSTRANDS, AND STRUCTURES FORMED OF THE METAL NANOSTRAND SYNTHESIZED THEREOF
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Pub. No.: WO/2018/218368 International Application No.: PCT/CA2018/050652
Publication Date: 06.12.2018 International Filing Date: 01.06.2018
IPC:
C30B 29/64 (2006.01) ,B82Y 30/00 (2011.01) ,B82Y 40/00 (2011.01) ,C30B 29/02 (2006.01) ,C30B 7/14 (2006.01) ,H01B 5/14 (2006.01) ,C09D 11/52 (2014.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
60
characterised by shape
64
Flat crystals, e.g. plates, strips, disks
B PERFORMING OPERATIONS; TRANSPORTING
82
NANO-TECHNOLOGY
Y
SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES
30
Nano-technology for materials or surface science, e.g. nano-composites
B PERFORMING OPERATIONS; TRANSPORTING
82
NANO-TECHNOLOGY
Y
SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES
40
Manufacture or treatment of nano-structures
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
7
Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
14
the crystallising materials being formed by chemical reactions in the solution
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
5
Non-insulated conductors or conductive bodies characterised by their form
14
comprising conductive layers or films on insulating-supports
[IPC code unknown for C09D 11/52]
Applicants:
NANO CNET LTD. [CA/CA]; 295 Hagey Boulevard Waterloo, Ontario N2L 6R5, CA
Inventors:
MARZBANRAD, Ehsan; CA
KHALIGH, Hadi Hosseinzadeh; CA
Agent:
BERESKIN & PARR LLP / S.E.N.C.R.L.; Scotia Plaza, 40 King Street West 40th Floor Toronto, Ontario M5H 3Y2, CA
Priority Data:
62/514,63802.06.2017US
62/667,65907.05.2018US
Title (EN) METHODS FOR SYNTHESIZING METAL NANOSTRANDS, AND STRUCTURES FORMED OF THE METAL NANOSTRAND SYNTHESIZED THEREOF
(FR) PROCÉDÉS DE SYNTHÈSE DE NANOBRINS MÉTALLIQUES ET STRUCTURES CONSTITUÉES DES NANOBRINS MÉTALLIQUES AINSI SYNTHÉTISÉS
Abstract:
(EN) Nanostructures formed of metal nanostrands, and methods of forming the nanostrands, are described. These nanostructures can be used as a flexible or non- flexible, transparent or non-transparent conductive films or electronic circuit for various different applications. An example metal nanostrand can include: a first nanoplate joined laterally to a second nanoplate. Each of the nanoplates can have a top surface, a bottom surface and one or more side surfaces laterally extending from the top surface to the bottom surface. A (111) crystallographic plane can be arranged at each of the top surface and the bottom surface.
(FR) L'invention concerne des nanostructures constituées de nanobrins métalliques et des procédés de formation des nanobrins. De telles nanostructures peuvent servir de films conducteurs, flexibles ou non et transparents ou non, ou de circuit électronique pour différentes applications. Un exemple de nanobrin métallique peut comprendre une première nanoplaque assemblée latéralement à une seconde nanoplaque. Chacune des nanoplaques peut comporter une surface supérieure, une surface inférieure et une ou plusieurs surfaces latérales s'étendant latéralement de la surface supérieure à la surface inférieure. Un plan cristallographique (111) peut être situé au niveau de chacune des surfaces supérieures et inférieures.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)